Abstract: A touch sensor comprises a touch sensor layer having an electrode pad portion formed in a bezel area, and a polarizing layer coupled to the touch sensor layer while opening an area of the electrode pad portion and having a side surface of an area of the electrode pad portion defining an altered surface and a side surface excluding the area of the electrode pad portion defining a straight line surface. The altered surface and the straight line surface have a cross-sectional inclination angle of 30° or less in a lateral direction with respect to a vertical direction.

Abstract: A touch sensor stack structure according to an exemplary embodiment of the present invention includes a touch sensor structure including a bonding portion, a circuit connection structure bonded to the bonding portion of the touch sensor structure, and an optical film stacked on the touch sensor structure. The optical film includes a protrusion covering an end portion of the circuit connection structure and overlapping the bonding portion. Damages of electrodes included in the touch sensor structure can be prevented by the optical film.

Abstract: A hot water system for a bidet having a housing is provided. The hot water system includes: a water inlet pipe connected to a faucet; a flow path guide tank located at a lower portion in the housing so that water introduced into the water inlet pipe flows; a sheath heater provided in the housing and configured to heat water discharged from the flow path guide tank; and a water outlet pipe configured to supply water heated by the sheath heater to the outside. The flow path guide tank has a flow path guide hole formed through in an upward direction so that water introduced into the water inlet pipe flows into an upper portion inside the housing and exchanges heat with the sheath heater.

Abstract: A touch sensor stack structure according to an exemplary embodiment of the present invention includes a touch sensor structure including a bonding portion, a circuit connection structure bonded to the bonding portion of the touch sensor structure, and an optical film stacked on the touch sensor structure. The optical film includes a protrusion covering an end portion of the circuit connection structure and overlapping the bonding portion. Damages of electrodes included in the touch sensor structure can be prevented by the optical film.

Abstract: A touch sensor comprises a touch sensor layer having an electrode pad portion formed in a bezel area, and a polarizing layer coupled to the touch sensor layer while opening an area of the electrode pad portion and having a side surface of an area of the electrode pad portion defining an altered surface and a side surface excluding the area of the electrode pad portion defining a straight line surface. The altered surface and the straight line surface have a cross-sectional inclination angle of 30° or less in a lateral direction with respect to a vertical direction.

Abstract: A touch sensor module includes a touch sensor layer including sensing electrodes and traces extending from the sensing electrodes, an optical layer on the touch sensor layer to cover the sensing electrodes, a circuit connection structure spaced apart from the optical layer and electrically connected to the traces on an end portion of the touch senor layer, and a colored resin pattern filling a gap between the optical layer and the circuit connection structure. An optical disturbance at the gap is prevented by the colored resin pattern.

Abstract: A laser lipolysis apparatus according to an embodiment of the present invention comprises: a first light irradiation unit for emitting a laser of a first wavelength reaching an upper region of a subcutaneous fat layer; and a second light irradiation unit for emitting a laser of a second wavelength reaching a lower region of the subcutaneous fat layer.

Abstract: A hot water system for a bidet having a housing is provided. The hot water system includes: a water inlet pipe connected to a faucet; a flow path guide tank located at a lower portion in the housing so that water introduced into the water inlet pipe flows; a sheath heater provided in the housing and configured to heat water discharged from the flow path guide tank; and a water outlet pipe configured to supply water heated by the sheath heater to the outside. The flow path guide tank has a flow path guide hole formed through in an upward direction so that water introduced into the water inlet pipe flows into an upper portion inside the housing and exchanges heat with the sheath heater.

Abstract: A touch sensor module includes a touch sensor layer including sensing electrodes and traces extending from the sensing electrodes, an optical layer on the touch sensor layer to cover the sensing electrodes, a circuit connection structure spaced apart from the optical layer and electrically connected to the traces on an end portion of the touch senor layer, and a colored resin pattern filling a gap between the optical layer and the circuit connection structure. An optical disturbance at the gap is prevented by the colored resin pattern.

Abstract: An energy saving LED lamp is disclosed. The LED lamp can control dimming or mood-lighting operation through repeated on/off operations of a simple power switch currently installed in a building, thereby eliminating requirement for any additional labor to change the existing switch or device for obtaining a dimming function or mood-lighting control function.

Abstract: There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10 MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

Abstract: The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the <0001> direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.

Abstract: There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

Abstract: A method of manufacturing a single crystalline gallium nitride (GaN) thick film by using a hydride gas phase epitaxy (HVPE), more particularly, the method of manufacturing c-plane ({0001}) of a single crystalline GaN thick film by using the HVPE. A GaN film is grown on a substrate by providing a hydrogen chloride (HCl) gas and an ammonia (NH3) gas, thereby obtaining the GaN film on the substrate, and a GaN thick film on the GaN film on the substrate is grown.

Abstract: A nitride semiconductor template having nano-voids at an interface between a substrate having one embossed surface and a nitride semiconductor layer can be rapidly prepared by hydride vapor phase epitaxy (HVPE) growth of the nitride semiconductor layer on the embossed surface of the substrate.