Patents by Inventor Hyun Mo Kang

Hyun Mo Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Data storage device, operation method thereof, and storage system having the same
    Patent number: 11210015
    Abstract: A data storage device includes a storage medium, a first buffer memory, a second buffer memory, and a controller. The controller is configured to control data input/output for the storage medium according to requests received from a host device and to store write data in the first and second buffer memories in response to a write request received from the host device.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: December 28, 2021
    Assignee: SK hynix Inc.
    Inventors: Hyung Min Kim, Do Hun Kim, Jae Han Park, Hyoung Suk Jang, Hyun Mo Kang
  • DATA STORAGE DEVICE, OPERATION METHOD THEREOF, AND STORAGE SYSTEM HAVING THE SAME
    Publication number: 20200150896
    Abstract: A data storage device includes a storage medium, a first buffer memory, a second buffer memory, and a controller. The controller is configured to control data input/output for the storage medium according to requests received from a host device and to store write data in the first and second buffer memories in response to a write request received from the host device.
    Type: Application
    Filed: August 9, 2019
    Publication date: May 14, 2020
    Applicant: SK hynix Inc.
    Inventors: Hyung Min KIM, Do Hun KIM, Jae Han PARK, Hyoung Suk JANG, Hyun Mo KANG
  • Circuit protection device having noise filters
    Patent number: 10020105
    Abstract: The present disclosure includes: a laminate in which a plurality of sheets are laminated; two or more noise filters provided spaced apart by a predetermined distance from each other in the laminate and respectively provided with a plurality of coil patterns; an external electrode provided outside the laminate and connected to the two or more noise filters; and a connection electrode provided outside the laminate being spaced apart from the external electrode to connect the two or more coil patterns.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: July 10, 2018
    Assignee: INNOCHIPS TECHNOLOGY CO., LTD.
    Inventors: In Kil Park, Tae Hyung Noh, Myung Ho Lee, Song Yeon Lee, Jung Hun Lee, Hyun Mo Kang
  • CIRCUIT PROTECTION DEVICE
    Publication number: 20170133142
    Abstract: The present disclosure includes: a laminate in which a plurality of sheets are laminated; two or more noise filters provided spaced apart by a predetermined distance from each other in the laminate and respectively provided with a plurality of coil patterns; an external electrode provided outside the laminate and connected to the two or more noise filters; and a connection electrode provided outside the laminate being spaced apart from the external electrode to connect the two or more coil patterns.
    Type: Application
    Filed: December 31, 2015
    Publication date: May 11, 2017
    Inventors: In Kil PARK, Tae Hyung NOH, Myung Ho LEE, Song Yeon LEE, Jung Hun LEE, Hyun Mo KANG
  • CIRCUIT PROTECTION DEVICE
    Publication number: 20150280682
    Abstract: A circuit protection device includes a plurality of sheets stacked in a vertical direction, each of which may include at least two conductive patterns formed separately from each other in a horizontal direction, and at least two common mode noise filters disposed in the horizontal direction, each of which includes at least two conductive patterns connected in the vertical direction.
    Type: Application
    Filed: March 27, 2015
    Publication date: October 1, 2015
    Inventors: In Kil PARK, Tae Hyung NOH, Myung Ho LEE, Jung Hun LEE, Byong Moon NAM, Hyun Mo KANG, Song Yeon LEE, Jin Hwan KIM
  • Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same
    Patent number: 8716112
    Abstract: Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method.
    Type: Grant
    Filed: October 16, 2012
    Date of Patent: May 6, 2014
    Inventors: Seung Ki Joo, Chang Woo Byun, Se Wan Son, Yong Woo Lee, Hyun Mo Kang, Seol Ah Park, Woo Chang Lim, Tao Li, Seung Jae Yun, Sang Joo Lee