Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

Abstract: Disclosed herein is a backrest interlocking type frame for a foldable wheelchair.

Abstract: Disclosed herein is a backrest interlocking type frame for a foldable wheelchair.

Abstract: A semiconductor memory device comprises a substrate, a first conductive line extending in a first direction on the substrate, a second conductive line extending in a second direction on the first conductive line, a memory cell between the first and the second conductive lines, and a spacer covering a part of a side wall of the memory cell, wherein the memory cell includes a first electrode connected to the first conductive line, a second electrode connected to the second conductive line, and an information storage pattern between the first and second electrodes, wherein the spacer covers a side wall of the information storage pattern and a side wall of the second electrode, but not side walls of the first electrode, and the first electrode is wider than the information storage pattern at a portion on which the first electrode and the information storage pattern contact to each other.

Abstract: A semiconductor memory device includes a substrate, a first conductive line disposed on the substrate and extending in a first direction, a second conductive line disposed on the first conductive line, and extending in a second direction intersecting the first direction, and a memory cell disposed between the first conductive line and the second conductive line, wherein the memory cell includes, a first electrode connected to the first conductive line, a second electrode connected to the second conductive line, an OTS film disposed between the first electrode and the second electrode, a high-concentration electrode disposed between the second electrode and the OTS film, wherein a concentration of nitrogen contained in the second electrode is lower than a concentration of nitrogen contained in the high-concentration electrode, wherein a logic state of data stored in the OTS film is based on a polarity of a program voltage.

Abstract: A multi-bank array type capacitor circuit is provided. The capacitor circuit includes a first cap bank including first to mth switch-capacitor circuits which are connected in parallel with each other, wherein the first to mth switch-capacitor circuits have different capacitances based on a first weight; and a second cap bank, connected in parallel with the first cap bank, and including first to mth switch-capacitor circuits which are connected in parallel with each other, wherein the first to mth switch-capacitor circuits have different capacitances based on a second weight that is different from the first weight.

Abstract: A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

Abstract: A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

Abstract: The present disclosure provides a method for converting the target gas contained in the exhaust gas in plasma phase and an apparatus for implementing the method, the method comprising the steps of: generating a plasma in a conversion region in which the conversion of the target gas occurs; supplying, to the conversion region, a conversion promoting agent containing a conversion promoting element of which the first ionization energy is not greater than 10 eV for promoting the conversion of the target gas; supplying, to the conversion region, a conversion agent that produces conversion products by combining with the dissociation products of the target gas and prevents the dissociation products from recombining into the target gas; and supplying the exhaust gas containing the target gas to the conversion region.

Abstract: A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.

Abstract: An amplifying apparatus is provided. The amplifying apparatus comprises an amplifying circuit comprising a power amplifier and a bias circuit, the bias circuit is configured to detect an ambient temperature of the power amplifier to output a temperature voltage and regulate an internal current based on an input control signal to supply a bias current obtained by the regulation to the power amplifier; and a temperature control circuit that generates the control signal based on the temperature voltage during initial driving from a transmission mode starting point in time to an input point in time at which an input signal is input and outputting the control signal to the amplifying circuit.

Abstract: The prevent invention relates to a biodegradable polymer resin composition which can realize excellent mechanical properties together with biodegradability and has improved molding processability, and a molded article thereof. The biodegradable polymer resin composition may include a polycarbonate-polyester copolymer including a branched repeating unit containing a mediating functional group including a central element and five to ten alkylene or heteroalkylene functional groups bonded to the mediating functional group, an aliphatic polycarbonate repeating unit having a chain structure, and an aromatic polyester repeating unit, and a biodegradable polyester resin having a melt index (measured at 190° C., 2.16 kg) of 3 g/10 min to 20 g/10 min.

Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.

Abstract: Disclosed is a wheelchair power apparatus for electronic driving conversion. It is an object of the present invention to provide a wheelchair power apparatus for electronic driving conversion, which can provide severely disabled people, for instance, patients with spinal cord injury, the weak or the old, who use wheelchairs, with convenience in movement, and convert a manual four-wheel wheelchair into an electronic three-wheel wheelchair just by detachably mounting the electronic module having electronic wheels to the existing manual four-wheel wheelchair.

Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.

Abstract: A radio frequency switch includes a control buffer circuit to generate a first gate voltage and a first body voltage; and a switching circuit to switch at least one signal path in response to the first gate voltage and the first body voltage. The control buffer circuit includes an off voltage detection circuit to detect whether the off voltage is a negative voltage or a ground voltage and output a voltage detection signal, a first gate buffer circuit to output a first gate voltage having a voltage level based on the voltage detection signal and the band selection signal, and a first body buffer circuit to output a first body voltage having a voltage level based on the voltage detection signal, the band selection signal, and the mode signal.

Abstract: Disclosed is a wheelchair power apparatus for electronic driving conversion. The wheelchair power apparatus for electronic driving conversion includes: an electronic module combined with a combining means of a manual wheelchair, wherein the electronic module includes: a driving wheel in which an in-wheel motor is mounted; an operation handle located directly above the driving wheel; a connector connected directly below the operation handle; a steering housing mounted directly below the connector in such a way that one side of the connector can be moved forwards or backwards inside the steering housing; a combining unit mounted directly below the steering housing and combined with a coupling means of a wheelchair; a battery mounted at the front of the combining unit; and strut supports and collapsible bars mounted at right and left sides of the driving wheel, so that the manual wheelchair is converted into an electronic wheelchair.

Abstract: A negative voltage generation circuit includes a clock generation circuit configured to generate a first clock signal, a first voltage control circuit configured to vary a first resistance value based on a magnitude of a power supply voltage and further configured to control a magnitude of a voltage in a first charge node, based on the varied first resistance value, and a first charge pump circuit configured to charge a voltage, controlled by the first voltage control circuit, in a charge mode, based on the first clock signal, and further configured to output a first voltage, generated by the charging, as a first negative voltage.

Abstract: Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.