Abstract: Embodiments of the present disclosure are directed to an optical assembly for optical transceiver which is composed of two separate sub-assemblies including an assembly that is coupled with a substrate and has a post formed to have a central hollow into a multi-branched shape, for increasing the optical alignment efficiency between the optical elements included in the optical assembly for optical transceiver which involves multiple complicated and sophisticated processes, the optical assembly for optical transceiver being structured to drain out the epoxy resin or the refractive index matching material used when coupling the optical fiber inserted from the outside with the optical elements, whereby greatly reducing optical alignment errors caused by the epoxy resin or refractive index matching material, as well as directed to an optical transceiver using the optical assembly for optical transceiver.

Abstract: The present invention relates to a multi-position sensing apparatus capable of sensing a position and an angle of a target, the apparatus including: a light emitting element that irradiates detection light to a first or second target; a first light receiving part having a first light receiving area in a first light receiving range angle with respect to a first light receiving axis to receive a first or second reflective light reflected from the first or second target; and a second light receiving receiving range angle with respect to a second light receiving axis in parallel to the first light receiving axis to receive the second or first reflective light reflected from the second or first target.

Abstract: The present invention relates to a multi-position sensing apparatus capable of sensing a position and an angle of a target, the apparatus including: a light emitting element that irradiates detection light to a first or second target; a first light receiving part having a first light receiving area in a first light receiving range angle with respect to a first light receiving axis to receive a first or second reflective light reflected from the first or second target; and a second light receiving receiving range angle with respect to a second light receiving axis in parallel to the first light receiving axis to receive the second or first reflective light reflected from the second or first target.

Abstract: A method for forming a T-shape gate having a length below 0.25 .mu.m for use in ultra-frequency semiconductor devices is disclosed. The insulating layer is side-etched by using the gate mask pattern through a conventional photolithography, the length of the insulating layer being controlled by the side-etching. The length of the insulating layer determines the length of the T-shape gate for allowing the T-shape gate having the length below 0.25 .mu.m to be obtained.