Patents by Inventor Hyun Ryu

Hyun Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230242521
    Abstract: The present invention relates to a pharmaceutical composition for preventing or treating pancreatic cancer associated with a RON mutation and a method using the same. The pharmaceutical composition for preventing or treating cancer according to the present invention may be applied to patients with pancreatic cancer in which a RON mutation is present. In particular, the present invention may be usefully used as a precision medicine for patients with pancreatic cancer which has resistance to cetuximab used in conventional anticancer therapy and has the RON?155, RON?160, or RON?165 mutation.
    Type: Application
    Filed: May 18, 2021
    Publication date: August 3, 2023
    Inventors: Hyun RYU, Joon-Yee JEONG, Young-Ok KO, Da-Eun KIM, Min-Hwa KIM, Eun-Hee KO
  • Publication number: 20220235064
    Abstract: An oxo-pyridine fusion ring compound of chemical formula 1 or a pharmaceutically acceptable salt thereof effectively inhibits the activity of RON and can not only effectively suppress the cell growth of cancer cell lines in which RON is activated, but also can effectively kill the cancer cell lines.
    Type: Application
    Filed: August 3, 2020
    Publication date: July 28, 2022
    Applicant: WELLMARKER BIO CO., LTD.
    Inventors: Hyun RYU, Jung-Eun LEE, Young-Ok KO, Yong-Seok KIM, Hye-Bin PARK
  • Publication number: 20050142847
    Abstract: The present invention discloses a method for forming metal lines in a semiconductor device. A plurality of metal lines are densely formed by using Al or Al alloy as a material and performing a reactive ion etching process using a low-k dielectric layer as hard mask patterns. Barrier metal layers are formed on the sidewalls of the metal lines. A low dielectric interlayer insulation film is formed when the low dielectric hard mask patterns exist. It is thus possible to obtain margins in a line process and gains in a critical value of the interlayer insulation film for insulating the metal lines. Therefore, a RC delay time can be reduced by restricting crosstalk between the metal lines and decreasing a capacitance between the metal lines.
    Type: Application
    Filed: June 29, 2004
    Publication date: June 30, 2005
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Hyun Ryu