Patents by Inventor Hyun S. Kang

Hyun S. Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication method of bipolar transistor
    Patent number: 4874712
    Abstract: Present invention relates to the fabrication method of the bipolar transistor.With this method the emitter of high-concentrated n-type is contacted closely to the extrinsic base of high-concentrated p-type.This structure is obtained by making the emitter of the bipolar transistor be self- aligned by the side wall under-cut of the nitride layer using double layers of the low temperature oxide and the nitride layer.
    Type: Grant
    Filed: September 26, 1988
    Date of Patent: October 17, 1989
    Assignee: Samsung Semiconductor & Telecommunication Co., Ltd.
    Inventors: Myung S. Kim, Hyun S. Kang, Soon K. Lim, Hee K. Park