Abstract: The present invention relates to a flash memory device and pre-program only the memory cells which keep the erase state by verifying whether the memory cells are programmed before performing the pre-program operation to prevent the memory cell from being over-programmed at the time of pre-program. Accordingly, there are excellent effects in that the reliability of the device can be improved by preventing the memory cell from being over-programmed and the operation speed of the device can be improved by reducing the time required in the pre-program operation.

Abstract: The present invention relates to a flash memory device, more particularly to a flash memory device which can shorten a pre-program time in a way that identifies the state of the pre-program and the program on a selected word line basis in a pre-program mode that must be pre-performed in a sector mode.