Abstract: A secondary battery including an electrode assembly; a can accommodating the electrode assembly; a cap assembly sealing the can; a first insulation member on a side of the electrode assembly, the first insulation member having an opening exposing at least a portion of a bottom surface of the electrode assembly; and a second insulation member on a bottom of the can and facing the bottom surface of the electrode assembly, the second insulation member having an area corresponding to an area of the opening in the first insulation member.

Abstract: A secondary battery including an electrode assembly; a can accommodating the electrode assembly; a cap assembly sealing the can; a first insulation member on a side of the electrode assembly, the first insulation member having an opening exposing at least a portion of a bottom surface of the electrode assembly; and a second insulation member on a bottom of the can and facing the bottom surface of the electrode assembly, the second insulation member having an area corresponding to an area of the opening in the first insulation member.

Abstract: Various embodiments of the present invention provide a stacking device for a secondary battery configured to stack electrode plates at a high rate, a stacking method using the same, and a secondary battery obtained thereby.

Abstract: A resist additive represented by Formula 1 below and a resist composition including the additive are disclosed. The resist additive improves hydrophobicity of the surface of the resist film to prevent materials from being leached in water during exposure of immersion lithography and is converted to have hydrophilicity by deprotection reaction during development. As a result, a micropattern of a resist film with excellent sensitivity and high resolution is formed. In Formula 1, the substituents are defined as described in the specification.

Abstract: Disclosed are a hydrophilic photoacid generator prepared by copolymerization of a first (meth)acrylic acid ester having a structure represented by the following Formula 1 or 2, with a polymerizable monomer selected from the group consisting of a second (meth)acrylic acid ester, an olefin-based compound and a mixture thereof, each of which contains a functional group selected from the group consisting of a hydroxyl group, a carboxyl group, a lactone group, a nitrile group and a halogen group: wherein respective substituents are defined in the specification, and a resist composition comprising the same. The hydrophilic photoacid generator is uniformly dispersed in a resist film, thus improving a line edge roughness of resist patterns.

Abstract: A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A? and B? are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.

Abstract: Provided is a copolymer. The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.

Abstract: An acid generating agent used for chemically amplified resist compositions is provided, which agent is represented by the following formula (1): wherein X represents a monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, and having at least one hydrogen atom on the ring substituted by an alkyl or alkoxy group which may be unsubstituted or substituted with a group selected from an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group and an aldehyde group, or by a perfluoroalkyl group, a hydroxyalkyl group, or a cyano group; R6 is an alkyl group, an alkoxy group, or a heteroatom selected from the group consisting of N, S and F; m is an integer from 0 to 2; and A+ is an organic counterion.

Abstract: A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A? and B? are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.

Abstract: Provided is a copolymer containing a repeating unit represented by the following formula (1): wherein R1 represents an alkanediyl group, a heteroalkanediyl group, a cycloalkanediyl group, a heterocycloalkanediyl group, an arylene group, a heteroarylene group, or an alkylarylene group; R2 represents a hydrogen atom, an alkyl group, a heteroalkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an alkoxy group, or an alkylalkoxy group; R3, R4, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n1 represents an integer from 0 to 10; and n2 represents an integer from 0 to 10. The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.

Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

Abstract: The present invention provides compositions for forming an oligomer array and methods for using the same. Such a composition may include an acid stable polymer, a photoacid generator and an organic solvent and may allow for the selective attachment of oligormers at one or more desired positions on a substrate using long wavelength light.

Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

Abstract: An acid generating agent used for chemically amplified resist compositions is provided, which agent is represented by the following formula (1): wherein X represents a monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, and having at least one hydrogen atom on the ring substituted by an alkyl or alkoxy group which and may be unsubstituted or substituted with a group selected from an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group and an aldehyde group, or by a perfluoroalkyl group, a hydroxyalkyl group, or a cyano group; R6 is an alkyl group, an alkoxy group, or a heteroatom selected from the group consisting of N, S and F; m is an integer from 0 to 2; and A+ is an organic counterion.

Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:

Abstract: A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent. The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:

Abstract: The present invention provides a chemically amplified resist composition including a novel polymer, a photoacid generator, and a solvent: The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.