Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.

Abstract: Implementations disclosed describe wireless devices and methods for mitigating aggressive medium reservations. A first wireless device comprises a transceiver and a processor coupled to the transceiver. The processor is to detect, within a first transmission received by the transceiver from a second wireless device via a first wireless communication channel, a pattern of medium reservations comprising a reservation duration that satisfies a threshold duration value. The processor is further to cause, in response to detecting the pattern of medium reservations, the transceiver to send a second transmission to an access point (AP) wireless device. The second transmission includes an indication of the pattern of medium reservations. The processor is further to detect a medium reservation mitigation signal within a third transmission received by the transceiver from the AP wireless device.

Abstract: An example electronic device includes a housing; a touchscreen display; a microphone; at least one speaker; a button disposed on a portion of the housing or set to be displayed on the touchscreen display; a wireless communication circuit; a processor; and a memory. When a user interface is not displayed on the touchscreen display, the electronic device enables a user to receive a user input through the button, receives user speech through the microphone, and then provides data on the user speech to an external server. An instruction for performing a task is received from the server. When the user interface is displayed on the touchscreen display, the electronic device enables the user to receive the user input through the button, receives user speech through the microphone, and then provides data on the user speech to the external server.

Abstract: A deep learning-based stent prediction method including: setting as a region of interest, a region in which a procedure is to be performed among blood vessel regions of a target patient, and obtaining a first intravascular ultrasound (IVUS) image, which is a preprocedural IVUS image of the region of interest, obtaining a plurality of first IVUS cross-sectional images into which the first IVUS image is divided at predetermined intervals, extracting feature information about procedure information of the target patient, obtaining mask image information in which a blood vessel boundary and an inner wall boundary are distinguished from each other, with respect to the plurality of first IVUS cross-sectional images, and predicting progress of a stent procedure containing a postprocedural area of a stent for the target patient, by inputting, into an artificial intelligence model, the plurality of first IVUS cross-sectional images, the feature information, and the mask image information.

Abstract: An embodiment of the present disclosure provides a thermal processing apparatus and an operation method thereof capable of controlling a heat distribution of a substrate at a low cost in a thermal processing process using a microwave. According to the present disclosure, a thermal processing apparatus includes a chamber that forms a thermal processing space of a substrate, a substrate support unit that is located at a lower portion of the thermal processing space and supports the substrate, and a microwave unit that is located at an upper portion of the thermal processing space and forms an electromagnetic field by the microwave in the thermal processing space.

Abstract: A method of analyzing a plaque tissue component based on deep learning, the method including: extracting a plurality of first intravascular ultrasound (IVUS) cross-sectional images into which a first IVUS image that is a preprocedural IVUS image of a patient is divided at predetermined intervals; labeling each of the plurality of first IVUS cross-sectional images by using label indices corresponding to plaque tissue components to form labeled images, performing image conversion to obtain a polar coordinate image through which a distribution of tissue components for each angle is identifiable by performing a coordinate transformation based on the labeled images, extracting a label vector for each angle based on the polar coordinate image, and outputting output data obtained by quantifying the tissue components for each angle by using an artificial intelligence model that is trained by using, as training data, the label vector for each angle.

Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.

Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.

Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.

Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.

Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.

Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.

Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.

Abstract: An electronic device includes a semiconductor memory, wherein the semiconductor memory may include: a cell mat disposed over a substrate, the cell mat including a plurality of memory cells; an insulating layer disposed over the cell mat; a conductive pattern disposed over the insulating layer, the conductive pattern overlapping a first portion of the cell mat without overlapping a second portion of the cell mat; and a shielding layer disposed in the insulating layer, the shielding layer overlapping at least the second portion of the cell mat, the shielding layer being capable of blocking plasma.

Abstract: An electronic device includes a semiconductor memory, wherein the semiconductor memory may include: a cell mat disposed over a substrate, the cell mat including a plurality of memory cells; an insulating layer disposed over the cell mat; a conductive pattern disposed over the insulating layer, the conductive pattern overlapping a first portion of the cell mat without overlapping a second portion of the cell mat; and a shielding layer disposed in the insulating layer, the shielding layer overlapping at least the second portion of the cell mat, the shielding layer being capable of blocking plasma

Abstract: An inlet/outlet pipe reinforcing device for a compressor. The device includes a body unit having a first body configured to support an outer periphery of the inlet/outlet pipe and a second body having a shape corresponding to that of the first body. A hinge shaft is fixedly mounted at one longitudinal side of the body unit so as to extend in a longitudinal direction of the body unit to cause the first body and the second body to be pivotally rotated with respect to each other. A flange of the device includes a first extension part and a second expanded part.

Abstract: The present invention relates to a vibration reduction device of a muffler tail-pipe for construction equipment, comprising: an engine hood provided to one side of an engine room for the protection of the peripheral parts including an engine and a muffler, and having a through hole at one side of the top surface thereof; the muffler provided to the lower portion of the engine hood in a state where the muffler is connected to one side of the engine; a tail-pipe of which one end is connected to the muffler and the other end is protruded to the outside by penetrating the through hole of the engine hood; and a plurality of elastic support parts for fixing the tail-pipe such that the tail-pipe is elastically supported by the engine hood.

Abstract: A method for fabricating a semiconductor apparatus includes setting a semiconductor substrate in a process chamber, increasing an internal temperature of the process chamber to a predetermined temperature for pyrolyzing a source gas, supplying the source gas to the inside of the process chamber and pyrolyzing ions of the source gas to remain on the semiconductor substrate, and forming the ohmic contact layer by supplying a reaction gas to the inside of the process chamber, wherein the reaction gas is reacted with non-metal ions pyrolyzed from source gas.

Abstract: The present invention relates to an input/output pipe reinforcing device for a vehicle compressor, whereby it is possible to prevent a linking area between the compressor and the input/output pipe from becoming damaged or deformed due to vehicle engine vibration and loads transmitted from the outside.

Abstract: A semiconductor apparatus includes a semiconductor substrate and a semiconductor layer extending along the substrate in a first direction and connecting to the semiconductor substrate, the semiconductor layer having a portion that connects to the semiconductor substrate, and a portion that does not connect to the semiconductor substrate and forms an active region floating over the semiconductor substrate. A word line formed on the active region and extends in a direction perpendicular to the first direction. Junction regions formed in the active region at both sides of the word line; and an air gap formed in a floating region between the semiconductor substrate and the active region.