Abstract: Disclosed are wood preforming devices for manufacturing a crash pad for a vehicle including a real wood sheet. A wood preforming device for manufacturing a crash pad for a vehicle includes a real wood sheet includes a lower press mold comprising a debossed portion provided on a portion on which a product is formed, and a support portion configured to support an upper press mold, in response to the lower press mold and the upper press mold pressing each other, the support portion having a protrusion for fixing a real wood sheet, the upper press mold having an embossed portion corresponding to the debossed portion of the lower press mold, and a movable core provided on the debossed portion of the lower press mold and being configured to guide the real wood sheet by moving upward from the debossed portion, in response to the upper press mold moving downward.

Abstract: An embodiment structural battery for an electric vehicle includes an upper rail and a lower rail coupled with the upper rail, wherein the upper rail and the lower rail are electrically connected with each other by a terminal and a wiring, so that the upper rail and the lower rail electrically connected with each other serve as both the structural battery and a roof rail of a vehicle body.

Abstract: An embodiment structural battery for an electric vehicle includes a plurality of cells stacked on each other, each of the plurality of cells including a positive electrode layer, an electrolyte layer, and a negative electrode layer stacked with the electrolyte layer between the positive and negative electrodes, wherein the plurality of cells define a battery by electrical connection of a positive electrode terminal and a negative electrode terminal respectively provided in the plurality of cells, structure reinforcement layers stacked on each of an outermost upper layer and an outermost lower layer of the plurality of cells, and carbon fiber current collecting layers stacked between each of the structure reinforcement layers and the plurality of cells.

Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Abstract: A semiconductor device includes a transistor area includes a transistor area comprising a transistor formed in the transistor area at a transistor level, wherein a gate of the transistor is formed at a gate level; a first metal line formed across the transistor area at a first level higher than the transistor level to supply a power voltage to the transistor; and a gate metal line formed at the gate level to supply the power voltage to the transistor area, and the gate metal line is electrically coupled to the first metal line.

Abstract: A semiconductor device with a reduced layout area includes pads disposed between a first voltage line and a second voltage line; first and second driver units adjacently disposed at an upper portion or a lower portion of the respective pads; and a metal line disposed between the pads and supplying power commonly to the first and second driver units.

Abstract: A semiconductor device with a reduced layout area includes pads disposed between a first voltage line and a second voltage line; first and second driver units adjacently disposed at an upper portion or a lower portion of the respective pads; and a metal line disposed between the pads and supplying power commonly to the first and second driver units.