Abstract: The present invention relates to a highly efficient sodium hypochlorite generation apparatus capable of decreasing disinfection by-products, which is a chlorine disinfection device for on-site generation and produces sodium hypochlorite solution by electrolyzing sodium chloride aqueous solution on site, thereby requiring no additional liquefied chlorine storage equipment or disaster prevention equipment and securing flexibility of installation and operation while not being regulated by a high-pressure gas safety control act.

Abstract: The present invention relates to a scrubber system having an automatic generator for an oxidizing-absorbing agent. The scrubber system comprises a scrubber and an oxidizing-absorbing agent generator. The scrubber includes a pollutant gas inlet through which air pollutants are introduced, a treated gas outlet through which the pollutant gas which has been treated is discharged, and a treated water outlet through which wastewater which has been used to treat the pollutant gas is discharged. The oxidizing-absorbing agent generator generates an oxidizing-absorbing agent by electrolyzing saline water or seawater in the scrubber, and supplies the generated oxidizing-absorbing agent into the scrubber to treat the pollutant gas introduced through the pollution gas inlet, thereby removing harmful substances.

Abstract: Methods of fabricating semiconductor devices are disclosed. An illustrated example method protects spacers and active areas by performing impurity ion implantation on an oxide layer prior to etching the oxide layer. The illustrated method includes forming a gate on a semiconductor substrate, forming a spacer on a sidewall of the gate, forming an oxide layer over the substrate, forming a mask on the oxide layer to cover a non-salicide area, implanting impurity ions into a portion of the oxide layer which is not covered by the mask, removing the portion of the oxide layer which is implanted with impurity ions, performing salicidation on the substrate, and removing the mask.

Abstract: Methods of fabricating semiconductor devices are disclosed. An illustrated example method protects spacers and active areas by performing impurity ion implantation on an oxide layer prior to etching the oxide layer. The illustrated method includes forming a gate on a semiconductor substrate, forming a spacer on a sidewall of the gate, forming an oxide layer over the substrate, forming a mask on the oxide layer to cover a non-salicide area, implanting impurity ions into a portion of the oxide layer which is not covered by the mask, removing the portion of the oxide layer which is implanted with impurity ions, performing salicidation on the substrate, and removing the mask.