Abstract: Provided is a method for preparing an oligomer including: supplying a monomer stream and a solvent stream to a reactor to perform an oligomerization reaction to prepare a reaction product; supplying a discharge stream from the reactor including the reaction product to a separation device and supplying a lower discharge stream from the separation device to a settling tank; adding an organic flocculant to the settling tank to settle and remove a polymer and supplying the lower discharge stream from the separation device from which the polymer is removed to a high boiling point separation column; and removing a high boiling point material from the lower portion in the high boiling point separation column and supplying an upper discharge stream including an oligomer to a solvent separation column.

Abstract: A secondary battery includes: a can having an accommodation space therein; an electrode assembly accommodated in the accommodation space in the can; and a cap assembly sealed with the can. The can has a beading part recessed into a side wall of the can at a region below where the cap assembly is accommodated, and the beading part has an acute angle with respect to the side wall of the can.

Abstract: Disclosed is a cathode for a lithium secondary battery, which has a coating layer formed on an edge portion of a cathode plate, a method of manufacturing the cathode, and a lithium secondary battery including the cathode. The cathode includes a cathode plate and a coating layer formed at an edge portion of the cathode plate, in which the cathode plate includes a cathode current collector provided with cathode tab and a cathode active material laminated on at least one surface of the cathode current collector, and the coating layer includes a conductive polymer layer and an insulating coating layer.

Abstract: A semiconductor device may include a gate structure, a channel structure extending through the gate structure, a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy, and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.

Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first dummy stacked body and a second dummy stacked body formed in a connection area of a substrate including a cell array area and the connection area, a cell stacked body disposed in the cell array area and the connection area and configured to enclose the first dummy stacked body and the second dummy stacked body, and a first vertical barrier disposed at a boundary between the cell stacked body and the first dummy stacked body and a second vertical barrier disposed at a boundary between the cell stacked body and the second dummy stacked body. The cell stacked body includes first and second extensions disposed to extend in substantially a linear shape in the connection area and a connector configured to connect the first and second extensions.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating device information on the identified memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a source structure; and a stack structure over the source structure, the stack structure including a plug and a slit, wherein the slit includes a source contact being connected to the source structure.

Abstract: The present technology relates to an electronic device. More specifically, the present technology relates to a memory device, a storage device, and a method of operating a memory controller. According to an embodiment, a memory device that outputs read data in response to a read enable signal provided from a memory controller includes a plurality of memory cells configured to store data, a plurality of page buffers configured to sense the data stored in the plurality of memory cells through a plurality of bit lines, and a data output controller configured to select a target page buffer to output data from among the plurality of page buffers according to a page buffer address control signal provided from the memory controller and control the selected target page buffer to output data stored in the selected target page buffer according to the read enable signal, while the read enable signal is input.

Abstract: A method for manufacturing a high-strength steel bar can include the steps of: reheating a steel slab at a temperature ranging from 1000° C. to 1100° C., the steel slab including a certain amount of carbon (C), silicon (Si), manganese (Mn), phosphorus (P), sulfur (S), chromium (Cr), copper (Cu), nickel (Ni), molybdenum (Mo), aluminum (Al), vanadium (V), nitrogen (N), antimony (Sb), tin (Sn), and iron (Fe) and other inevitable impurities, The method can further include finish hot-rolling the reheated steel slab at a temperature of 850° C. to 1000° C., and cooling the hot-rolled steel to a martensite transformation start temperature (Ms (° C.)) through a tempcore process.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating device information on the identified memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A memory controller may control a memory device. The memory device may be coupled to the memory controller through a channel. The memory controller may include an idle time monitor and a clock signal generator. The idle time monitor may output an idle time interval of the memory device. The idle time interval may be between an end time of a previous operation of the memory device and a start time of a current operation. The clock signal generator may generate a clock signal based on the idle time interval and output the clock signal to the memory device through the channel to perform a current operation.

Abstract: A memory system includes a memory device and a controller. The controller is coupled to the memory device through input/output (I/O) lines. The controller includes an interface component and a dummy power consumption component. The interface component performs a signal training operation for adjusting a timing of a clock signal, to which test data is synchronized. The dummy power consumption component performs a dummy power consumption operation while the signal training operation is performed.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating device information on the identified memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating device information on the identified memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A method for manufacturing a high-strength steel bar can include the steps of: reheating a steel slab at a temperature ranging from 1000° C. to 1100° C., the steel slab including a certain amount of carbon (C), silicon (Si), manganese (Mn), phosphorus (P), sulfur (S), chromium (Cr), copper (Cu), nickel (Ni), molybdenum (Mo), aluminum (Al), vanadium (V), nitrogen (N), antimony (Sb), tin (Sn), and iron (Fe) and other inevitable impurities, The method can further include finish hot-rolling the reheated steel slab at a temperature of 850° C. to 1000° C., and cooling the hot-rolled steel to a martensite transformation start temperature (Ms (° C.)) through a tempcore process.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating device information on the identified memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating the identified device information on memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating device information on the identified memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A memory system includes a memory device and a controller. The controller is coupled to the memory device through input/output (I/O) lines. The controller includes an interface component and a dummy power consumption component. The interface component performs a signal training operation for adjusting a timing of a clock signal, to which test data is synchronized. The dummy power consumption component performs a dummy power consumption operation while the signal training operation is performed.

Abstract: A memory system including: a memory device looping back a first clock to generate a second clock and outputting read data that are read from a memory cell region of the memory device in synchronization with the second clock; and a memory controller generating the first clock that includes a plurality of modulation sections by performing a modulation operation on a source clock according to a specific scheme, outputting the first clock to the memory device, and receiving the read data in response to the second clock. The read data includes a plurality of section data corresponding to the plurality of modulation sections included in the second clock, respectively, and the memory controller verifies reliability of each of the plurality of section data included in the read data by performing a demodulation operation on the second clock according to the specific scheme.