Abstract: Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.

Abstract: Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract: Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract: Provided are a germanium (Ge) based metal-insulator transition (MIT) thin film which is formed of a Ge single-element material instead of a compound material of two or more elements and by which material growth may be easily performed and a problem of a second phase characteristic in accordance with a structural defect and an included impurity may be solved, an MIT device including the MIT thin film, and a method of fabricating the MIT device. The MIT device includes a substrate; a germanium (Ge) based MIT thin film which is formed of a Ge single-element material on the substrate and in which a discontinuous MIT occurs at a predetermined transition voltage; and at least two thin film electrodes contacting the Ge based MIT thin film, wherein the discontinuous MIT occurs in the Ge based MIT thin film due to a voltage or a current which is applied through the thin film electrodes.

Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Abstract: An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.

Abstract: The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

Abstract: A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.

Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Abstract: An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.

Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.

Abstract: Provided are a high current control circuit including a metal-insulator transition (MIT) device, and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control circuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected to a current driving device and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MIT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device with a heat-preventing transistor which prevents heat generation and is connected to the MIT device.

Abstract: Provided is an electro-luminescent device (ELD) including a metal-insulator transition (MIT) layer. The ELD includes: a substrate; a EL phosphor layer positioned on the substrate and comprising luminescent center ions generating light; the MIT layer disposed on a surface of the EL phosphor layer and being abruptly changed from an insulator to a metal according to a variation of a voltage; a first insulator adhered to the MIT layer to distribute a voltage applied from an external source; and a second insulator disposed on the other side of the EL phosphor layer.

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.