Abstract: The present invention relates to a method of manufacturing a color filter, which includes forming a light-shielding portion and a pixel portion on a substrate, and reforming the pixel portion to be ink-philic by using a laser ablation. In the method of manufacturing the color filter, the laser ablation is used to prevent ink particles from being agglomerated in the pixel portion, uniformly filling with the ink, and selectively performing surface reformation of the pixel portion. The color filter manufactured by using the method has desirable pixels without color mixing.

Abstract: A LCD (Liquid Crystal Display) device includes a backlight unit, a lower polarizer positioned on the backlight unit, a liquid crystal layer positioned on the lower polarizer, and an upper reflection polarizer positioned on the liquid crystal layer. The upper reflection polarizer is configured such that a regularly arranged metallic lattice is formed on a support this LCD device may give a good mirror effect when power is intercepted, and also give a clear display with high brightness even at a bright place when power is supplied to operate the LCD device.

Abstract: Disclosed is a method of preparing an electrode, which can lead to uniform electrochromism of a lithium nickel oxide layer by applying a voltage in all directions of the electrode during a formatting process, an electrode prepared by the same, and an electrochromic device including the electrode.

Abstract: A method for forming an electrochromic layer pattern includes forming a transparent electrode layer and a photoresist layer on a transparent substrate, forming a photoresist pattern by laser interference lithography, and depositing an electrochromic layer pattern on the transparent electrode through openings defined by the photoresist pattern by depositing an electrochromic layer on a front surface of the substrate and then lifting up the photoresist pattern. An insulation layer may be further formed between the transparent layer and the photoresist layer. Here, the electrochromic layer may be formed after an insulation layer pattern is formed using the photoresist pattern as an etching mask. In this case, the electrochromic layer pattern is formed in openings defined by the insulation layer pattern. As a result, a contact surface area between the electrochromic layer pattern and the ion conductive layer is increased to ensure a rapid response speed.

Abstract: The present invention provides a coating composition for antireflection that includes a low refraction-thermosetting resin having a refractive index of 1.2 to 1.45, a high refraction-ultraviolet curable resin having a refractive index of 1.46 to 2, and an ultraviolet absorber; an antireflection film manufactured using the coating composition; and a method of manufacturing the antireflection film. The antireflection film according to the present invention has excellent abrasion resistance and antireflection characteristic. Further, since the antireflection film can be manufactured in one coating process, it is possible to reduce manufacturing cost.

Abstract: Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode in a depth direction to form a plurality of continuous, isolated or mixed type electrode pattern grooves with a certain array; and (b) filling the formed grooves with a conductive ink containing a transparent conducting particle through an inkjet and then performing heat treatment to form a buried transparent electrode, the optoelectronic semiconductor device, and an apparatus for manufacturing the optoelectronic semiconductor device. In the present invention, covering loss is significantly reduced due to a buried transparent electrode so that the high efficiency of photoelectric conversion can be implemented, and there can be provided the easiness of a manufacturing process and the enhancement of productivity through the unification of etching and electrode forming processes.

Abstract: A gas sensor and a method for fabricating the same includes a semiconductor substrate, a supporting layer formed on the semiconductor substrate, the supporting layer being electrically insulative and having a pattern groove formed therein, a heater formed in the pattern groove, an electrically insulating layer formed on the heater and the supporting layer, an electrode formed on the insulating layer, and a sensing layer formed on the electrode and the insulating layer to detect a target gas of interest according to a measured change in electrical conductivity or resistance thereof.