Abstract: A semiconductor device and a method of manufacturing the same. The semiconductor device has a substrate in which recess regions are formed and semiconductor regions acting as a source region or a drain region is defined between the recess regions; a gate insulating layer disposed on an inner surface of each recess region; a recess gate disposed on the gate insulating layer in each recess region; an insulating capping layer disposed above the recess gate in each recess region; a metallic insertion layer disposed between a side surface of the recess gate and a side surface of the insulating capping layer and facing with a side surface of the source region or the drain region; and an intermediate insulating layer disposed between the metallic insertion layer and the recess gate to electrically insulate the metallic insertion layer from the recess gate.

Abstract: Disclosed is a hot-stamping component, which includes a base steel plate; and a plated layer on the base steel plate and including a first layer, a second layer, and an intermetallic compound portion having an island shape in the second layer, wherein the first layer and the second layer are sequentially stacked, and an area fraction of the intermetallic compound portion with respect to the second layer is an amount of 20% to 60%.

Abstract: Disclosed is a hot-stamping component, which includes a base steel plate; and a plated layer on the base steel plate and including a first layer, a second layer, and an intermetallic compound portion having an island shape in the second layer, wherein the first layer and the second layer are sequentially stacked, and an area fraction of the intermetallic compound portion with respect to the second layer is an amount of 20% to 60%.

Abstract: Provided is a hot stamping component having a tensile strength of 1680 Mpa or greater including a microstructure comprising prior austenite grains (PAGs), and an average grain diameter of the PAGs is 25 ?m or less.

Abstract: One embodiment of the present invention discloses a member for automobile structure including a base steel sheet and a plating layer covering at least one surface of the base steel sheet, wherein the member for automobile structure has a tensile strength of 1350 MPa or greater and a yield strength of 900 MPa or greater, wherein the base steel sheet includes a martensite phase having an area fraction of 80% or greater, an iron-based carbide located inside the martensite phase and having an area fraction of less than 5% based on the martensite phase, and precipitates distributed inside the base steel sheet, wherein a mismatch dislocation exists at the interface between iron and the precipitates of the base steel sheet, and a difference between lattice constants of the iron and the precipitates is less than 25% of the lattice constants of the iron.

Abstract: The present invention provides a hot stamping component having a tensile strength of 1350 Mpa or greater, including a microstructure including prior austenite grains (PAG), wherein an average particle diameter of the PAGs is 35 ?m or less.

Abstract: Disclosed is a hot-stamping component, which includes a base steel plate; and a plated layer on the base steel plate and including a first layer, a second layer, and an intermetallic compound portion having an island shape in the second layer, wherein the first layer and the second layer are sequentially stacked, and an area fraction of the intermetallic compound portion with respect to the second layer is an amount of 20% to 60%.

Abstract: A method of manufacturing a hot stamping includes: inserting a blank having a plating layer formed on at least one surface of a base material into a heating furnace having a plurality of sections having different temperature increase rate ranges; and multi-stage heating the blank gradually while passing through the plurality of sections. The plurality of sections include: a first heating section having a first average temperature increase rate change rate; a second heating section having a second average temperature increase rate change rate different from the first average temperature increase rate change rate; and a third heating section having a third average temperature increase rate change rate different from the first average temperature increase rate change rate and the second average temperature increase rate change rate. The third average temperature increase rate change rate includes a section in which a positive value is changed to a negative value.

Abstract: According to an aspect of the present disclosure, provided is a method of manufacturing a hot stamping component in which a residual stress analysis value satisfies a preset condition. The method includes heating a blank; forming a molded body by hot stamping the blank; and cooling the molded body to form a hot stamped component. The residual stress analysis value may be a product of a magnitude of an X-ray diffraction analysis (XRD) value obtained by quantifying residual stress by XRD analysis and a magnitude of an electron backscatter diffraction (EBSD) value obtained by quantifying an orientation by EBSD analysis, and the preset condition is about 2.85* 10-4 Degree*MPa/µm2 or greater and about 0.05 Degree*MPa/µm2 or less.

Abstract: Disclosed is a method of manufacturing a blank for hot stamping, which includes forming a plated layer on a steel plate by immersing the steel plate in a plating bath including aluminum and silicon; and heating the steel plate on which the plated layer is formed at a first temperature for a first time period.

Abstract: Disclosed is a hot-stamping component, which includes a base steel plate; and a plated layer on the base steel plate and including a first layer, a second layer, and an intermetallic compound portion having an island shape in the second layer, wherein the first layer and the second layer are sequentially stacked, and an area fraction of the intermetallic compound portion with respect to the second layer is an amount of 20% to 60%.

Abstract: A method for manufacturing a high-strength cold-rolled steel sheet according to an embodiment includes the steps of: reheating a steel slab, which includes 0.10 wt % to 0.13 wt % carbon (C), 0.9 wt % to 1.1 wt % silicon (Si), 2.2 wt % to 2.3 wt % manganese (Mn), 0.35 wt % to 0.45 wt % chromium (Cr), 0.04 wt % to 0.07 wt % molybdenum (Mo), 0.02 wt % to 0.05 wt % antimony (Sb), and the remainder being iron (Fe) and inevitable impurities, at a temperature of 1150° C. to 1250° C.; hot-rolling the reheated slab in such a manner as to reach a finishing mill delivery temperature of 800° C. to 900° C.; cooling the hot-rolled slab to a temperature of 600° C. to 700° C. and coiling the cooled slab, thereby obtaining a hot-rolled steel sheet; pickling the hot-rolled steel sheet, followed by cold rolling; annealing the cold-rolled steel sheet in a two-phase region of ? and ? phases; and cooling the annealed steel sheet to the martensite temperature range, followed by overaging.

Abstract: A method for manufacturing a high-strength cold-rolled steel sheet according to an embodiment includes the steps of: reheating a steel slab, which includes 0.10 wt % to 0.13 wt % carbon (C), 0.9 wt % to 1.1 wt % silicon (Si), 2.2 wt % to 2.3 wt % manganese (Mn), 0.35 wt % to 0.45 wt % chromium (Cr), 0.04 wt % to 0.07 wt % molybdenum (Mo), 0.02 wt % to 0.05 wt % antimony (Sb), and the remainder being iron (Fe) and inevitable impurities, at a temperature of 1150° C. to 1250° C.; hot-rolling the reheated slab in such a manner as to reach a finishing mill delivery temperature of 800° C. to 900° C.; cooling the hot-rolled slab to a temperature of 600° C. to 700° C. and coiling the cooled slab, thereby obtaining a hot-rolled steel sheet; pickling the hot-rolled steel sheet, followed by cold rolling; annealing the cold-rolled steel sheet in a two-phase region of ? and ? phases; and cooling the annealed steel sheet to the martensite temperature range, followed by overaging.

Abstract: A plating method for an RF device is disclosed. The method includes (a) pre-treating the RF device made from a substrate material; (b) forming a copper plating layer by applying copper plating to the RF device; and (c) forming a thin-film layer over the copper plating layer, the thin-film layer made of a precious metal, where a thickness of the precious-metal thin-film layer is thinner than a skin depth at a working frequency band. The disclosed method makes it possible to provide a plating treatment with a low cost while providing a superior appearance quality.

Abstract: A method of coating an RF device for reducing cost of manufacture and coating period of time and a sputtering apparatus used in the same are disclosed. The sputtering apparatus used for coating of an RF device includes a supporting member on which an object to be coated corresponding to the RF device is placed, a first target made up of material coated on the object and a second target disposed separately from the first target. Here, power is applied to the first target and the second target when the object is coated.

Abstract: A plating method for an RF device is disclosed. The method includes (a) pre-treating the RF device made from a substrate material; (b) forming a copper plating layer by applying copper plating to the RF device; and (c) forming a thin-film layer over the copper plating layer, the thin-film layer made of a precious metal, where a thickness of the precious-metal thin-film layer is thinner than a skin depth at a working frequency band. The disclosed method makes it possible to provide a plating treatment with a low cost while providing a superior appearance quality.