Abstract: An input buffer circuit may include a first switch that may couple a first voltage source to an output line based on an enable signal, such that the enable signal is configured to cause the input buffer circuit to operate. The input buffer circuit may also include a first set of switches that may couple the first voltage source to the output line based on the enable signal and an input signal, wherein the first switch and the first set of switches may couple the first voltage source to the output line in response to the input signal being greater than an input reference signal. The input buffer circuit may also include a switch that may couple a second voltage source to the output line in response to the input signal being less than the input reference signal.

Abstract: Apparatuses and methods for duty cycle distortion correction of clocks are disclosed. An example apparatus includes a clock circuit configured to receive complementary input clocks and a control signal and to provide multiphase clocks responsive to complementary input clocks. The clock circuit is further configured to be in a first mode or second mode controlled by the control signal and configured to provide the multiphase clocks having greater duty cycle distortion in a first mode than in a second mode.

Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing, an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.

Abstract: Apparatuses and methods for duty cycle error correction of clock signals are disclosed. An example method includes detecting a clock period error between a first clock signal and a third clock signal and adjusting a timing of the first or third clock signals based on the clock period error therebetween. The method further includes detecting a clock period error between a second clock signal and a fourth clock signal and adjusting a timing of the second or fourth clock signals based on the clock period error therebetween. Additionally, the example method includes detecting a duty cycle error between the first, second, third, and fourth clock signals, and adjusting a timing of the first and third or second and fourth clock signals based on the duty cycle error therebetween.

Abstract: Apparatuses and methods for duty cycle distortion correction of clocks are disclosed. An example apparatus includes a clock circuit configured to receive complementary input clocks and a control signal and to provide multiphase clocks responsive to complementary input clocks. The clock circuit is further configured to be in a first mode or second mode controlled by the control signal and configured to provide the multiphase clocks having greater duty cycle distortion in a first mode than in a second mode.

Abstract: Apparatuses and methods for duty cycle error correction of clock signals are disclosed. An example method includes detecting a clock period error between a first clock signal and a third clock signal and adjusting a timing of the first or third clock signals based on the clock period error therebetween. The method further includes detecting a clock period error between a second clock signal and a fourth clock signal and adjusting a timing of the second or fourth clock signals based on the clock period error therebetween. Additionally, the example method includes detecting a duty cycle error between the first, second, third, and fourth clock signals, and adjusting a timing of the first and third or second and fourth clock signals based on the duty cycle error therebetween.

Abstract: Apparatuses and methods for providing active an inactive clock signals are disclosed. An example apparatus includes an input clock buffer and a clock divider circuit. The input clock buffer includes a receiver circuit configured to receive first and second clock signals or first and second constant voltages. The receiver circuit is further configured to provide first and second output signals based on the complementary clock signals or the first and second constant voltages. The first and second clock signals are complementary and the second constant voltage is less than the first constant voltage. The clock divider circuit is configured to receive the first and second output signals and provide multiphase clock signals based on the first and second output signals from the input clock buffer.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: Apparatuses and methods for input signal receiver circuits are disclosed. An example apparatus includes an amplifier stage configured to receive a reference voltage and an input signal. The amplifier stage is configured to provide in a first mode a first output having a complementary logic level to the input signal and a second output having a same logic level to the input signal and is further configured to provide in a second mode the first output unrelated to the input signal and the second output having a same logic level to the input signal. The example apparatus further includes a pull-up circuit and a pull-down circuit. The pull-up circuit is configured to provide a high logic level voltage to a common node when activated by the first output. The pull-down circuit is configured to provide a low logic level voltage to the common node when activated by the second output.

Abstract: Methods, systems, and apparatuses related to memory operation with common clock signals are provided. A memory device or system that includes one or more memory devices may be operable with a common clock signal without a delay from switching on-die termination on or off. For example, a memory device may comprise first impedance adjustment circuitry configured to provide a first impedance to a received clock signal having a clock impedance and second impedance adjustment circuitry configured to provide a second impedance to the received clock signal. The first impedance and the second impedance may be configured to provide a combined impedance about equal to the clock impedance when the first impedance adjustment circuitry and the second impedance adjustment circuitry are connected to the received clock signal in parallel.

Abstract: Apparatuses and methods for providing active an inactive clock signals are disclosed. An example apparatus includes an input clock buffer and a clock divider circuit. The input clock buffer includes a receiver circuit configured to receive first and second clock signals or first and second constant voltages. The receiver circuit is further configured to provide first and second output signals based on the complementary clock signals or the first and second constant voltages. The first and second clock signals are complementary and the second constant voltage is less than the first constant voltage. The clock divider circuit is configured to receive the first and second output signals and provide multiphase clock signals based on the first and second output signals from the input clock buffer.

Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: Apparatuses and methods for duty cycle distortion correction of clocks are disclosed. An example apparatus includes a clock circuit configured to receive complementary input clocks and a control signal and to provide multiphase clocks responsive to complementary input clocks. The clock circuit is further configured to be in a first mode or second mode controlled by the control signal and configured to provide the multiphase clocks having greater duty cycle distortion in a first mode than in a second mode.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: Apparatuses and methods for providing active an inactive clock signals are disclosed. An example apparatus includes an input clock buffer and a clock divider circuit. The input clock buffer includes a receiver circuit configured to receive first and second clock signals or first and second constant voltages. The receiver circuit is further configured to provide first and second output signals based on the complementary clock signals or the first and second constant voltages. The first and second clock signals are complementary and the second constant voltage is less than the first constant voltage. The clock divider circuit is configured to receive the first and second output signals and provide multiphase clock signals based on the first and second output signals from the input clock buffer.

Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

Abstract: In an example apparatus, a command path receives read commands and provides respective control signals for each read command. The command path is configured to provide initial control signals for an initial read command responsive to a first clock edge of a clock signal of a plurality of multiphase clock signals and to further provide respective control signals for subsequent read commands responsive to receipt of the subsequent mad commands. The example apparatus further includes a read data output circuit configured to receive the control signals from the command path and further receive read data in parallel. The read data output circuit is configured to provide the read data serially responsive to the control signals.

Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.