Patents by Inventor Hyun-Yoon Cho

Hyun-Yoon Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12112827
    Abstract: A method includes measuring a linearity of a first pull-up circuit, a second pull-up circuit, a third pull-up circuit, a first pull-down circuit, a second pull-down circuit and a third pull-down circuit using an initial pull-up code and an initial pull-down code, each of the first pull-up circuit, the second pull-up circuit and the third pull-up circuit having a respective resistance value determined based on a respective pull-up code, and each of the first pull-down circuit, the second pull-down circuit and the third pull-down circuit having a respective resistance value determined based on a respective pull-down code, and determining a calibration setting indicator based on the measurement result, the calibration setting indicator indicating a calibration method of a transmission driver including the first pull-up circuit, the second pull-up circuit, the third pull-up circuit, the first pull-down circuit, the second pull-down circuit and the third pull-down circuit.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: October 8, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo Hwan Kim, Jun Young Park, Jin Do Byun, Kwang Seob Shin, Eun Seok Shin, Hyun-Yoon Cho, Young Don Choi, Jung Hwan Choi
  • Publication number: 20240212746
    Abstract: Disclosed is a memory device which includes a pull-up driver that is connected between a power supply voltage and a first node, a T-coil circuit that is connected between the first node and a second node, an external resistor, and a ZQ controller that performs a ZQ calibration operation on the pull-up driver. The ZQ controller includes a path selecting circuit that selects one node among the first node and the second node, a comparing circuit that compares a voltage of the one node selected by the path selecting circuit with a pull-up reference voltage and outputs a comparison result, and a code generating circuit that generates a pull-up code for driving the pull-up driver, based on the comparison result. While the pull-up code is generated, the external resistor is connected between the second node and a ground voltage.
    Type: Application
    Filed: December 15, 2023
    Publication date: June 27, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Minsu JUNG, Jindo BYUN, Joohwan KIM, Eun Seok SHIN, Hyun-Yoon CHO, Junghwan CHOI
  • Publication number: 20230360689
    Abstract: A semiconductor memory device is provided. The semiconductor includes a data clock buffer that receives a data clock signal from a memory controller and outputs a pair of differential input signals, an edge delay controller that adjusts duty ratios of the pair of differential input signals based on a control code and outputs a pair of corrected clock signals, a first unit delay path circuit that generates four output clock signals having different phases based on the pair of corrected clock signals, a rising edge multiplexer that serially outputs data corresponding to a rising edge of each of the four output clock signals, a second unit delay path circuit that generates four duplicate clock signals having different phases based on the pair of corrected clock signals and a quadrature error correction circuit detector that detects a duty error based on the duplicate clock signals and outputs the control code.
    Type: Application
    Filed: April 26, 2023
    Publication date: November 9, 2023
    Inventors: Jun Young Park, Joo Hwan Kim, Jin Do Byun, Eun Seok Shin, Hyun Sub Rie, Hyun-Yoon Cho, Jung Hwan Choi
  • Publication number: 20230280782
    Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.
    Type: Application
    Filed: May 11, 2023
    Publication date: September 7, 2023
    Inventors: Junyoung PARK, YOUNG-HOON SON, HYUN-YOON CHO, YOUNGDON CHOI, JUNGHWAN CHOI
  • Patent number: 11687114
    Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: June 27, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Junyoung Park, Young-Hoon Son, Hyun-Yoon Cho, Youngdon Choi, Junghwan Choi
  • Publication number: 20230143365
    Abstract: A method includes measuring a linearity of a first pull-up circuit, a second pull-up circuit, a third pull-up circuit, a first pull-down circuit, a second pull-down circuit and a third pull-down circuit using an initial pull-up code and an initial pull-down code, each of the first pull-up circuit, the second pull-up circuit and the third pull-up circuit having a respective resistance value determined based on a respective pull-up code, and each of the first pull-down circuit, the second pull-down circuit and the third pull-down circuit having a respective resistance value determined based on a respective pull-down code, and determining a calibration setting indicator based on the measurement result, the calibration setting indicator indicating a calibration method of a transmission driver including the first pull-up circuit, the second pull-up circuit, the third pull-up circuit, the first pull-down circuit, the second pull-down circuit and the third pull-down circuit.
    Type: Application
    Filed: June 29, 2022
    Publication date: May 11, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Joo Hwan KIM, Jun Young PARK, Jin Do BYUN, Kwang Seob SHIN, Eun Seok SHIN, Hyun-Yoon CHO, Young Don CHOI, Jung Hwan CHOI
  • Publication number: 20230066632
    Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.
    Type: Application
    Filed: October 18, 2022
    Publication date: March 2, 2023
    Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
  • Patent number: 11508420
    Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: November 22, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
  • Patent number: 11461176
    Abstract: A memory device includes a multiphase clock generator which generates a plurality of divided clock signals, a first error correction block which receives a first divided clock signal among the plurality of divided clock signals, a first data multiplexer which transmits first least significant bit data corresponding to the first divided clock signal, a second error correction block which receives the first divided clock signal, and a second data multiplexer which transmits first most significant bit data corresponding to the first divided clock signal. The first error correction block receives the first least significant bit data and corrects a toggle timing of the first least significant bit data. The second error correction block receives the first most significant bit data and corrects a toggle time of the first most significant bit data.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: October 4, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun Young Park, Young-Hoon Son, Hyun-Yoon Cho, Young Don Choi, Jung Hwan Choi
  • Publication number: 20220138045
    Abstract: A memory device includes a multiphase clock generator which generates a plurality of divided clock signals, a first error correction block which receives a first divided clock signal among the plurality of divided clock signals, a first data multiplexer which transmits first least significant bit data corresponding to the first divided clock signal, a second error correction block which receives the first divided clock signal, and a second data multiplexer which transmits first most significant bit data corresponding to the first divided clock signal. The first error correction block receives the first least significant bit data and corrects a toggle timing of the first least significant bit data. The second error correction block receives the first most significant bit data and corrects a toggle time of the first most significant bit data.
    Type: Application
    Filed: August 10, 2021
    Publication date: May 5, 2022
    Inventors: Jun Young PARK, Young-Hoon SON, Hyun-Yoon CHO, Young Don CHOI, Jung Hwan CHOI
  • Publication number: 20210405683
    Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.
    Type: Application
    Filed: January 8, 2021
    Publication date: December 30, 2021
    Inventors: Junyoung PARK, YOUNG-HOON SON, HYUN-YOON CHO, YOUNGDON CHOI, JUNGHWAN CHOI
  • Publication number: 20210327476
    Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 21, 2021
    Inventors: DONGHUN LEE, Daesik MOON, Young-Soo SOHN, Young-Hoon SON, Ki-Seok OH, Changkyo LEE, Hyun-Yoon CHO, Kyung-Soo HA, Seokhun HYUN
  • Patent number: 11062744
    Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: July 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
  • Publication number: 20190362763
    Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.
    Type: Application
    Filed: January 30, 2019
    Publication date: November 28, 2019
    Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun