Patents by Inventor Hyun-Yoon Cho
Hyun-Yoon Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12112827Abstract: A method includes measuring a linearity of a first pull-up circuit, a second pull-up circuit, a third pull-up circuit, a first pull-down circuit, a second pull-down circuit and a third pull-down circuit using an initial pull-up code and an initial pull-down code, each of the first pull-up circuit, the second pull-up circuit and the third pull-up circuit having a respective resistance value determined based on a respective pull-up code, and each of the first pull-down circuit, the second pull-down circuit and the third pull-down circuit having a respective resistance value determined based on a respective pull-down code, and determining a calibration setting indicator based on the measurement result, the calibration setting indicator indicating a calibration method of a transmission driver including the first pull-up circuit, the second pull-up circuit, the third pull-up circuit, the first pull-down circuit, the second pull-down circuit and the third pull-down circuit.Type: GrantFiled: June 29, 2022Date of Patent: October 8, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Joo Hwan Kim, Jun Young Park, Jin Do Byun, Kwang Seob Shin, Eun Seok Shin, Hyun-Yoon Cho, Young Don Choi, Jung Hwan Choi
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Publication number: 20240212746Abstract: Disclosed is a memory device which includes a pull-up driver that is connected between a power supply voltage and a first node, a T-coil circuit that is connected between the first node and a second node, an external resistor, and a ZQ controller that performs a ZQ calibration operation on the pull-up driver. The ZQ controller includes a path selecting circuit that selects one node among the first node and the second node, a comparing circuit that compares a voltage of the one node selected by the path selecting circuit with a pull-up reference voltage and outputs a comparison result, and a code generating circuit that generates a pull-up code for driving the pull-up driver, based on the comparison result. While the pull-up code is generated, the external resistor is connected between the second node and a ground voltage.Type: ApplicationFiled: December 15, 2023Publication date: June 27, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Minsu JUNG, Jindo BYUN, Joohwan KIM, Eun Seok SHIN, Hyun-Yoon CHO, Junghwan CHOI
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Publication number: 20230360689Abstract: A semiconductor memory device is provided. The semiconductor includes a data clock buffer that receives a data clock signal from a memory controller and outputs a pair of differential input signals, an edge delay controller that adjusts duty ratios of the pair of differential input signals based on a control code and outputs a pair of corrected clock signals, a first unit delay path circuit that generates four output clock signals having different phases based on the pair of corrected clock signals, a rising edge multiplexer that serially outputs data corresponding to a rising edge of each of the four output clock signals, a second unit delay path circuit that generates four duplicate clock signals having different phases based on the pair of corrected clock signals and a quadrature error correction circuit detector that detects a duty error based on the duplicate clock signals and outputs the control code.Type: ApplicationFiled: April 26, 2023Publication date: November 9, 2023Inventors: Jun Young Park, Joo Hwan Kim, Jin Do Byun, Eun Seok Shin, Hyun Sub Rie, Hyun-Yoon Cho, Jung Hwan Choi
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Publication number: 20230280782Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.Type: ApplicationFiled: May 11, 2023Publication date: September 7, 2023Inventors: Junyoung PARK, YOUNG-HOON SON, HYUN-YOON CHO, YOUNGDON CHOI, JUNGHWAN CHOI
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Patent number: 11687114Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.Type: GrantFiled: January 8, 2021Date of Patent: June 27, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Junyoung Park, Young-Hoon Son, Hyun-Yoon Cho, Youngdon Choi, Junghwan Choi
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Publication number: 20230143365Abstract: A method includes measuring a linearity of a first pull-up circuit, a second pull-up circuit, a third pull-up circuit, a first pull-down circuit, a second pull-down circuit and a third pull-down circuit using an initial pull-up code and an initial pull-down code, each of the first pull-up circuit, the second pull-up circuit and the third pull-up circuit having a respective resistance value determined based on a respective pull-up code, and each of the first pull-down circuit, the second pull-down circuit and the third pull-down circuit having a respective resistance value determined based on a respective pull-down code, and determining a calibration setting indicator based on the measurement result, the calibration setting indicator indicating a calibration method of a transmission driver including the first pull-up circuit, the second pull-up circuit, the third pull-up circuit, the first pull-down circuit, the second pull-down circuit and the third pull-down circuit.Type: ApplicationFiled: June 29, 2022Publication date: May 11, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Joo Hwan KIM, Jun Young PARK, Jin Do BYUN, Kwang Seob SHIN, Eun Seok SHIN, Hyun-Yoon CHO, Young Don CHOI, Jung Hwan CHOI
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Publication number: 20230066632Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.Type: ApplicationFiled: October 18, 2022Publication date: March 2, 2023Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
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Patent number: 11508420Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.Type: GrantFiled: June 23, 2021Date of Patent: November 22, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
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Patent number: 11461176Abstract: A memory device includes a multiphase clock generator which generates a plurality of divided clock signals, a first error correction block which receives a first divided clock signal among the plurality of divided clock signals, a first data multiplexer which transmits first least significant bit data corresponding to the first divided clock signal, a second error correction block which receives the first divided clock signal, and a second data multiplexer which transmits first most significant bit data corresponding to the first divided clock signal. The first error correction block receives the first least significant bit data and corrects a toggle timing of the first least significant bit data. The second error correction block receives the first most significant bit data and corrects a toggle time of the first most significant bit data.Type: GrantFiled: August 10, 2021Date of Patent: October 4, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun Young Park, Young-Hoon Son, Hyun-Yoon Cho, Young Don Choi, Jung Hwan Choi
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Publication number: 20220138045Abstract: A memory device includes a multiphase clock generator which generates a plurality of divided clock signals, a first error correction block which receives a first divided clock signal among the plurality of divided clock signals, a first data multiplexer which transmits first least significant bit data corresponding to the first divided clock signal, a second error correction block which receives the first divided clock signal, and a second data multiplexer which transmits first most significant bit data corresponding to the first divided clock signal. The first error correction block receives the first least significant bit data and corrects a toggle timing of the first least significant bit data. The second error correction block receives the first most significant bit data and corrects a toggle time of the first most significant bit data.Type: ApplicationFiled: August 10, 2021Publication date: May 5, 2022Inventors: Jun Young PARK, Young-Hoon SON, Hyun-Yoon CHO, Young Don CHOI, Jung Hwan CHOI
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Publication number: 20210405683Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.Type: ApplicationFiled: January 8, 2021Publication date: December 30, 2021Inventors: Junyoung PARK, YOUNG-HOON SON, HYUN-YOON CHO, YOUNGDON CHOI, JUNGHWAN CHOI
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Publication number: 20210327476Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.Type: ApplicationFiled: June 23, 2021Publication date: October 21, 2021Inventors: DONGHUN LEE, Daesik MOON, Young-Soo SOHN, Young-Hoon SON, Ki-Seok OH, Changkyo LEE, Hyun-Yoon CHO, Kyung-Soo HA, Seokhun HYUN
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Patent number: 11062744Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.Type: GrantFiled: January 30, 2019Date of Patent: July 13, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
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Publication number: 20190362763Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.Type: ApplicationFiled: January 30, 2019Publication date: November 28, 2019Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun