Abstract: A semiconductor device may include a first film and a second film defining parts of a trench, a plug conductive film, a via, and a wiring in the trench. The trench may include a second sub-trench having a second width below a first sub-trench having a first width. The plug conductive film may extend from a first side of the first film to penetrate a bottom face of the trench. An uppermost face of the plug conducive film may be in the trench. The via may include an insulating liner between the plug conductive film and the first film. The uppermost face of the plug conductive film and at least a part of a side wall of the plug conductive film may be in contact with the wiring. An upper face of the insulating liner may be exposed by a bottom face of the second sub-trench.

Abstract: A method of manufacturing a multilayer metal plate by electroplating includes a first forming operation of forming one of a first metal layer and a second metal layer on a substrate by electroplating, wherein the second metal layer is less recrystallized than the first metal layer, the second metal layer is comprised of nanometer-size grains, and the second metal layer has a higher level of tensile strength than the first metal layer; and a second forming operation of forming, by electroplating, a third metal layer not formed in the first forming operation on a surface of one of the first metal layer and the second metal layer formed in the first forming operation.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

Abstract: A signal transmitting circuit includes a first output control circuit, a second output control circuit, a first output driver, and a second output driver. The first output control circuit generates a first main driving signal based on a first control signal and generates a first auxiliary driving signal based on the first control signal and a second control signal. The second output control circuit generates a second main driving signal based on the second control signal and generates a second auxiliary driving signal based on the first control signal and the second control signal. The first output driver drives an output node based on the first main driving signal and the first auxiliary driving signal. The second output driver drives the output node based on the second main driving signal and the second auxiliary driving signal.

Abstract: A signal transmitting device includes an output control circuit and a transmitting circuit. The output control circuit generates a first encoded symbol, a second encoded symbol, a third encoded symbol, and a fourth encoded symbol and an inverted flag signal by inverting the logic levels of second bits of a first symbol, a second symbol, a third symbol, and a fourth symbol, and generates a first output control signal and a second output control signal based on the first to fourth encoded symbols, when the maximum transition is present among the first to fourth symbols. The transmitting circuit may transmit the inverted flag signal and a Tx (Transmit) signal generated based on the first and second output control signals.

Abstract: A signal transmitting device includes an output control circuit and a transmitting circuit. The output control circuit generates a first encoded symbol, a second encoded symbol, a third encoded symbol, and a fourth encoded symbol and an inverted flag signal by inverting the logic levels of second bits of a first symbol, a second symbol, a third symbol, and a fourth symbol, and generates a first output control signal and a second output control signal based on the first to fourth encoded symbols, when the maximum transition is present among the first to fourth symbols. The transmitting circuit may transmit the inverted flag signal and a Tx (Transmit) signal generated based on the first and second output control signals.

Abstract: A signal transmitting circuit includes a first output control circuit, a second output control circuit, a first output driver, and a second output driver. The first output control circuit generates a first main driving signal based on a first control signal and generates a first auxiliary driving signal based on the first control signal and a second control signal. The second output control circuit generates a second main driving signal based on the second control signal and generates a second auxiliary driving signal based on the first control signal and the second control signal. The first output driver drives an output node based on the first main driving signal and the first auxiliary driving signal. The second output driver drives the output node based on the second main driving signal and the second auxiliary driving signal.

Abstract: A FINFET includes a substrate having a semiconductor fin extending upward from a first surface thereof, and first and second power rails on first and second opposing sides of the semiconductor fin, respectively. A base of the semiconductor fin may be recessed within a trench within the surface of the substrate, and the first and second power rails may at least partially fill the trench. A through-substrate via may be provided, which extends from adjacent a second surface of the substrate to at least one of the first and second power rails. A source/drain contact is also provided, which is electrically connected to a source/drain region of the FINFET and at least one of the first and second power rails.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

Abstract: A semiconductor device and a method for fabricating the same. The semiconductor device comprising: a first level wiring disposed at a first metal level, and includes a first line wiring, a first insulating capping film and a first side wall graphene film, the first insulating capping film extending along an upper surface of the first line wiring, and the first side wall graphene film extending along a side wall of the first line wiring; an interlayer insulating film covering the side wall of the first line wiring and a side wall of the first insulating capping film; and a second level wiring disposed at a second metal level higher than the first metal level, and includes a second via connected to the first line wiring, and a second line wiring connected to the second via, wherein the second via penetrates the first insulating capping film.

Abstract: A reception circuit includes a receiver, a noise boosting circuit and a buffer. The receiver generates a positive amplification signal and a negative amplification signal by amplifying a first input signal and a second input signal. The noise boosting circuit adjusts voltage levels of the positive amplification signal and the negative amplification signal based on the first input signal and the second input signal. The buffer generates an output signal by amplifying the positive amplification signal and the negative amplification signal.

Abstract: A reception circuit includes a receiver, a noise boosting circuit and a buffer. The receiver generates a positive amplification signal and a negative amplification signal by amplifying a first input signal and a second input signal. The noise boosting circuit adjusts voltage levels of the positive amplification signal and the negative amplification signal based on the first input signal and the second input signal. The buffer generates an output signal by amplifying the positive amplification signal and the negative amplification signal.

Abstract: An amplification circuit configured to generate an output signal by differentially amplifying first and second input signals. The first and second input signals are a differential signal pair. Alternatively, the first input signal is a single-ended signal, and the second input signal is a reference signal. The amplification circuit is configured to perform a differential amplification operation by increasing a gain for generating an output signal based on the first input signal.

Abstract: A reception circuit includes a receiver, a noise boosting circuit and a buffer. The receiver generates a positive amplification signal and a negative amplification signal by amplifying a first input signal and a second input signal. The noise boosting circuit adjusts voltage levels of the positive amplification signal and the negative amplification signal based on the first input signal and the second input signal. The buffer generates an output signal by amplifying the positive amplification signal and the negative amplification signal.

Abstract: A signal receiving circuit includes a buffer, a sampling circuit, and an equalizer. The buffer generates first and second amplified signals by amplifying a currently-inputted received signal in synchronization with an amplification clock signal. The sampling circuit generates an output signal by sampling the first and second amplified signals in synchronization with a sampling clock signal. The equalizer changes voltage levels of the first and second amplified signals based on third and fourth amplified signals which are generated from a previously-inputted received signal in synchronization with the amplification clock signal.

Abstract: A reception circuit includes a receiver, a noise boosting circuit and a buffer. The receiver generates a positive amplification signal and a negative amplification signal by amplifying a first input signal and a second input signal. The noise boosting circuit adjusts voltage levels of the positive amplification signal and the negative amplification signal based on the first input signal and the second input signal. The buffer generates an output signal by amplifying the positive amplification signal and the negative amplification signal.

Abstract: A signal receiving circuit includes a buffer, a sampling circuit, and an equalizer. The buffer generates first and second amplified signals by amplifying a currently-inputted received signal in synchronization with an amplification clock signal. The sampling circuit generates an output signal by sampling the first and second amplified signals in synchronization with a sampling clock signal. The equalizer changes voltage levels of the first and second amplified signals based on third and fourth amplified signals which are generated from a previously-inputted received signal in synchronization with the amplification clock signal.

Abstract: An amplification circuit configured to generate an output signal by differentially amplifying first and second input signals. The first and second input signals are a differential signal pair. Alternatively, the first input signal is a single-ended signal, and the second input signal is a reference signal. The amplification circuit is configured to perform a differential amplification operation by increasing a gain for generating an output signal based on the first input signal.

Abstract: A semiconductor apparatus includes an internal clock generation circuit, a receiver, and a sampling circuit. The internal clock generation circuit generates a receiving clock signal and a sampling clock signal based on a reference clock signal, the sampling clock signal having a phase different from the receiving clock signal. The receiver receives an input signal in synchronization with the receiving clock signal and to generate an amplified signal. The sampling circuit samples the amplified signal in synchronization with the sampling clock signal to generate an output signal.

Abstract: A semiconductor apparatus may include an internal clock generation circuit, a receiver, and a sampling circuit. The internal clock generation circuit may generate a receiving clock signal and a sampling clock signal based on a reference clock signal, the sampling clock signal having a phase different from the receiving clock signal. The receiver may receive an input signal in synchronization with the receiving clock signal and to generate an amplified signal. The sampling circuit may sample the amplified signal in synchronization with the sampling clock signal and to generate an output signal.