Abstract: The present invention relates to a whey-derived polar lipid-concentrated fraction composition, being a single-phase composition derived from a whey protein concentrate, wherein the composition is derived from a fraction obtained by treating the whey protein concentrate with a water-containing spirit, a total lipid content is 90 percent by weight (wt %) or more with respect to a dry weight of the composition, and a phospholipid content is 35 wt % or more with respect to the total lipid weight. According to the present invention, a whey-derived polar lipid-concentrated fraction composition in a stable form that maximizes emulsification and physiological functionality may be prepared.

Abstract: A display panel including an oxide thin film transistor is disclosed. In the oxide thin film transistor, a part of the active layer between a source region and a drain region is covered with an etch stopper layer, and the etch stopper layer is partially covered by the first electrode and the second electrode of the oxide thin film transistor. The length in which the etch stopper layer is overlapped by the second electrode is greater than the length in which the etch stopper layer is overlapped by the first electrode to suppress threshold voltage shift in the oxide thin film transistor.

Abstract: A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.

Abstract: A display panel including an oxide thin film transistor is disclosed. In the oxide thin film transistor, a part of the active layer between a source region and a drain region is covered with an etch stopper layer, and the etch stopper layer is partially covered by the first electrode and the second electrode of the oxide thin film transistor. The length in which the etch stopper layer is overlapped by the second electrode is greater than the length in which the etch stopper layer is overlapped by the first electrode to suppress threshold voltage shift in the oxide thin film transistor.

Abstract: A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.