Abstract: A method for manufacturing a high-quality GaN HEMT power semiconductor epitaxial wafer according to the present disclosure includes forming a nucleation region on a growth substrate; and forming a 3-dimensional nitride structure region (3DNS region), a stress-relieving region, a buffer region, a channel region, and a barrier region on the nucleation region. The 3DNS region is formed at one or more positions among: between the nucleation region and the stress-relieving region, between individual regions within the stress-relieving region, between the stress-relieving region and the buffer region, between the buffer region and the channel region, and between the barrier region and a pGaN region formed thereon. The 3DNS region is formed of a nitride material having an energy bandgap smaller than that of a lower region.

Abstract: Embodiments according to the present invention provide a high-quality E-mode GaN HEMT power semiconductor epitaxy wafer comprises a GaN channel region in which a 2DEG (2-dimensional electron gas) is formed; an AlGaN barrier region formed on the GaN channel region; and a p-type semiconductor region formed on the AlGaN barrier region, wherein the p-type semiconductor region has a first doping region having a minimum doping concentration at a boundary with the AlGaN barrier region and an increasing magnesium (Mg) doping concentration in a thickness direction, and a second doping region having the minimum doping concentration on a back surface of the AlGaN barrier region, in which the magnesium (Mg) doping concentration decreases in a thickness direction after passing a maximum doping concentration.

Abstract: Embodiments according to the present invention provide a method for manufacturing a GaN HEMT power semiconductor epitaxy wafer having a high-quality, high-resistance buffer region, comprising: a first GaN buffer layer formation step in which carbon is doped using a metal-organic source among sources supplied for GaN growth as a precursor for carbon doping; and a second GaN buffer layer formation step in which carbon is doped by supplying a precursor for carbon doping separately from the sources supplied for GaN growth; wherein the precursor for carbon doping in the second GaN buffer layer formation step is at least one of CH4 (methane), C2H4 (ethylene), C2H2 (acetylene), C3H8 (propane), i-C4H10 (iso-butane), and [N(CH3)3] (trimethylamine).

Abstract: Embodiments according to the present invention provide a high-quality GaN HEMT power semiconductor epitaxy wafer having a three-dimensional nitride structure, comprising: a growth substrate; a nucleation region formed on the growth substrate; and a three-dimensional nitride structure region formed on the nucleation region and having a composition ratio that varies along a lateral direction.

Abstract: Embodiments according to the present invention provide a high-quality GaN HEMT power semiconductor epitaxy wafer having a three-dimensional nitride structure, comprising: a growth substrate; a nucleation region formed on the growth substrate; and a three-dimensional nitride structure region formed on the nucleation region and having a composition ratio that varies along a lateral direction.

Abstract: Embodiments according to the present invention are an AlN thick film-based GaN HEMT epitaxy wafer comprises a growth substrate made of a semi-insulating material or a conductive material, an AlN nucleation region grown on the growth substrate, an AlN stress control region grown on the AlN nucleation region and having an air void or an Al vacancy, an AlN buffer region grown on the AlN stress control region and not including the air void and the Al vacancy, and an active region grown on the AlN buffer region and including a GaN channel region and an AlGaN barrier region.

Abstract: Embodiments according to the present disclosure provide an epitaxy wafer for a GaN HEMT with enhanced electrical insulation, comprising: a growth substrate; a nucleation region grown on the growth substrate; a high-resistance region having electrically high resistance characteristics, which comprises a high-resistance unit region defined by a first region grown as a group III nitride semiconductor doped with carbon and a second region grown as a group III nitride semiconductor on the first region, which is provided on the nucleation region; and an active region including a channel region grown on the high-resistance region and a barrier region grown on the channel region.

Abstract: Provided is a positive temperature coefficient (PTC) unit for a vehicle heater. The PTC unit according to an exemplary embodiment of the present invention includes: a heat generation part which includes PTC elements; and a heat radiation part which is provided on at least one surface of the heat generation part and includes a heat radiation base material and a heat radiation film provided on at least a portion of an outer surface of the heat radiation base material to improve heat radiation performance. According to the present invention, improved heat radiation performance may be exhibited, and concurrently, heat radiation performance due to excellent durability may be exhibited for a long period of time without a structural change for increasing a specific surface area of a heat radiation part while reducing an air ventilation property, so as to improve heat radiation performance.

Abstract: Provided is a heating element having a fuse function. The heating element having a fuse function according to an exemplary embodiment of the present invention includes a plurality of heat sources which generate heat when power is applied, a fuse member of which both end portions are physically connected to two heat sources disposed to be spaced apart from each other by a gap to connect the two heat sources in series and which is fused to electrically disconnect the two heat sources when a temperature is higher than or equal to a preset temperature, and an insulating member which surrounds the plurality of heat sources and the fuse member.

Abstract: A heat exchange unit for a ventilation device includes: a case having a first inlet port through which first air is sucked and a second outlet port through which second air is discharged formed on a front side, and a first outlet port through which the first air is discharged and a second inlet port through which the second air is sucked formed on a back side; and heat exchangers having a first air passage through which the first air passes and a second air passage through which the second air passes formed thereon. A first separation plate for separating the first inlet port and the second outlet port is installed in the height direction on the front side of the case. A second separation plate for separating the second inlet port and the first outlet port is installed in the height direction on the other side of the case.

Abstract: Provided is a heating element having a fuse function. The heating element having a fuse function according to an exemplary embodiment of the present invention includes a plurality of heat sources which generate heat when power is applied, a fuse member of which both end portions are physically connected to two heat sources disposed to be spaced apart from each other by a gap to connect the two heat sources in series and which is fused to electrically disconnect the two heat sources when a temperature is higher than or equal to a preset temperature, and an insulating member which surrounds the plurality of heat sources and the fuse member.

Abstract: A heat exchange unit for a ventilation device includes: a case having a first inlet port through which first air is sucked and a second outlet port through which second air is discharged formed on a front side, and a first outlet port through which the first air is discharged and a second inlet port through which the second air is sucked formed on a back side; and heat exchangers having a first air passage through which the first air passes and a second air passage through which the second air passes formed thereon. A first separation plate for separating the first inlet port and the second outlet port is installed in the height direction on the front side of the case. A second separation plate for separating the second inlet port and the first outlet port is installed in the height direction on the other side of the case.

Abstract: Provided are a hybrid metal sheet for magnetic shielding and a wireless power transmission module including the same. The hybrid metal sheet for magnetic shielding according to an embodiment of the present invention comprises: a first sheet layer made of a ribbon sheet of an amorphous alloy having a first width; and a plurality of second sheet layers stacked in multiple layers on one side of the first sheet layer, wherein the second sheet layer may be a sheet layer formed by arranging a plurality of divided sheets having a second width narrower than the first width and made of a ribbon sheet of a nano-crystal alloy on the same plane.

Abstract: Provided are a hybrid metal sheet for magnetic shielding and a wireless power transmission module including the same. The hybrid metal sheet for magnetic shielding according to an embodiment of the present invention comprises: a first sheet layer made of a ribbon sheet of an amorphous alloy having a first width; and a plurality of second sheet layers stacked in multiple layers on one side of the first sheet layer, wherein the second sheet layer may be a sheet layer formed by arranging a plurality of divided sheets having a second width narrower than the first width and made of a ribbon sheet of a nano-crystal alloy on the same plane.

Abstract: Provided is a positive temperature coefficient (PTC) unit for a vehicle heater. The PTC unit according to an exemplary embodiment of the present invention includes: a heat generation part which includes PTC elements; and a heat radiation part which is provided on at least one surface of the heat generation part and includes a heat radiation base material and a heat radiation film provided on at least a portion of an outer surface of the heat radiation base material to improve heat radiation performance. According to the present invention, improved heat radiation performance may be exhibited, and concurrently, heat radiation performance due to excellent durability may be exhibited for a long period of time without a structural change for increasing a specific surface area of a heat radiation part while reducing an air ventilation property, so as to improve heat radiation performance.

Abstract: An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type AlxGa1-xN layer (0<x??0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type AlxGa1-xN layer (0<x??0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).

Abstract: An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system.

Abstract: A light emitting device may include a first conductive type semiconductor layer, an active layer including a quantum well and a quantum wall on the first conductive type semiconductor layer, an undoped last barrier layer on the active layer; an AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer on the undoped last barrier layer; and a second conductive type semiconductor layer on the AlxInyGa(1-x-y)N-based layer. The undoped last barrier layer may be provided between the AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer and a last quantum well which is closest to the second conductive type semiconductor layer among the quantum well and may include a first Inp1Ga1-p1N (0<p1<1) layer, an Alq1Inq2Ga1-q1-q2N (0<q1, q2<1) layer on the first Inp1Ga1-p1N layer, and a second Inp2Ga1-p2N (0<p2<1) layer on the Alq1Inq2Ga1-q1-q2N layer.

Abstract: An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system.

Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.