Abstract: A method of manufacturing a thin-film transistor (TFT) having uniform performance in terms of threshold voltage and the like, the TFT, and a display apparatus including the same are disclosed. The method includes: (i) forming a polysilicon layer having a source region, a drain region, and a channel region between the source region and the drain region; (ii) doping a central region in the channel region with a first impurity except for peripheral portions; and (iii) doping the source region and the drain region with a second impurity of a conductivity type that is different from that of the first impurity.

Abstract: An organic light-emitting display apparatus includes a display that includes an organic emission layer and a thin film transistor that drives the organic emission layer, and a backlight that irradiates light toward the thin film transistor.

Abstract: A method of fabricating an organic light-emitting device, including: providing a substrate; forming a control electrode on the substrate; forming an insulating layer covering at least a top surface of the control electrode; forming a hole transport layer pattern through printing on at least a part of the insulating layer; forming an organic light-emitting layer to be in contact with at least a part of a surface of the hole transport layer pattern; forming an electron transport layer pattern through printing to be in contact with at least a part of a surface of the organic light-emitting layer; and forming a first electrode and a second electrode respectively on the hole transport layer pattern and the electron transport layer pattern.

Abstract: Provided are a thin film transistor (TFT) and a method of manufacturing the TFT. The TFT includes a substrate; a first conductive type semiconductor layer on the substrate and having a recess; second conductive type spacers at opposite side walls in the recess; a main semiconductor layer covering the first conductive type semiconductor layer and the second conductive type spacers and comprising a channel region and source and drain regions; a gate insulating layer on the main semiconductor layer; and a gate electrode on the gate insulating layer and corresponding to the recess.

Abstract: A backplane for a display apparatus includes a substrate including a display area and a non-display area; a first transistor formed on the display area; and a second transistor formed on the non-display area, wherein a first active layer includes a first channel area, a first source area disposed on one side of the first channel area, a first drain area disposed on the other side of the first channel area, and a low-density doped area and a halo doped area that are adjacent to both ends of the first gate electrode, and the second active layer includes a second channel area, a second source area disposed on one side of the second channel area, and a second drain area disposed on the other side of the second channel area.

Abstract: Provided is a method of fabricating an organic light-emitting device. The method of fabricating an organic light-emitting device includes: providing a substrate; forming a control electrode on the substrate; forming an insulating layer covering at least a top surface of the control electrode; forming a hole transport layer pattern through printing on at least a part of the insulating layer; forming an organic light-emitting layer to be in contact with at least a part of a surface of the hole transport layer pattern; forming an electron transport layer pattern through printing to be in contact with at least a part of a surface of the organic light-emitting layer; and forming a first electrode and a second electrode respectively on the hole transport layer pattern and the electron transport layer pattern.