Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Abstract: An example embodiment relates to a plasma diagnostic apparatus that exists outside of a plasma generation chamber. The plasma diagnostic apparatus is configured to recognize and/or diagnose a state of plasma using a signal flowing from a floated electrode of a plasma generation apparatus to determine a diagnostic factor of the plasma.

Abstract: Disclosed herein is a rotary-type polishing device having protrusion members. The rotary-type polishing device includes a rotary shaft, a disc-type body, an elastic rubber, and a plurality of protrusion members. The disc-type body is coupled with the rotary shaft and is configured to integrally rotate together with the rotary shaft. Furthermore, the disc-type body has a concavely curved outer surface, which is formed on the underside of the outer circumferential surface thereof. The elastic rubber, having a predetermined thickness, is attached to the outer surface and conforms to the shape of the outer surface. The protrusion members are attached to or partially embedded in the rubber.

Abstract: A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.

Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Abstract: A plasma etching apparatus having an upper electrode, a lower electrode corresponding to the upper electrode, to place a substrate on, and a high frequency power generator to generate plasma by applying high frequency power to the upper electrode or the lower electrode, wherein a distance between the upper electrode and the lower electrode varies discontinuously on a portion of opposite surfaces of the electrodes by varying the shape of the upper electrode.

Abstract: An inductively-coupled antenna (ICP) in a plasma generating apparatus comprises an inner antenna segment having an annular shape and at least one outer antenna segment approximately concentrically placed outside of the inner antenna segment, and connected to the inner antenna segment in series, wherein at least one of the inner antenna segments and the outer antenna segments have a plurality of annular coils connected in parallel with each other and having a different diameter from each other. Accordingly, the present invention provides an ICP antenna and plasma generating apparatus using the same having a simple structure, a reduced inductance, and an improved uniformity of plasma density.