Abstract: A deep learning-based stent prediction method including: setting as a region of interest, a region in which a procedure is to be performed among blood vessel regions of a target patient, and obtaining a first intravascular ultrasound (IVUS) image, which is a preprocedural IVUS image of the region of interest, obtaining a plurality of first IVUS cross-sectional images into which the first IVUS image is divided at predetermined intervals, extracting feature information about procedure information of the target patient, obtaining mask image information in which a blood vessel boundary and an inner wall boundary are distinguished from each other, with respect to the plurality of first IVUS cross-sectional images, and predicting progress of a stent procedure containing a postprocedural area of a stent for the target patient, by inputting, into an artificial intelligence model, the plurality of first IVUS cross-sectional images, the feature information, and the mask image information.

Abstract: A method of analyzing a plaque tissue component based on deep learning, the method including: extracting a plurality of first intravascular ultrasound (IVUS) cross-sectional images into which a first IVUS image that is a preprocedural IVUS image of a patient is divided at predetermined intervals; labeling each of the plurality of first IVUS cross-sectional images by using label indices corresponding to plaque tissue components to form labeled images, performing image conversion to obtain a polar coordinate image through which a distribution of tissue components for each angle is identifiable by performing a coordinate transformation based on the labeled images, extracting a label vector for each angle based on the polar coordinate image, and outputting output data obtained by quantifying the tissue components for each angle by using an artificial intelligence model that is trained by using, as training data, the label vector for each angle.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.

Abstract: In a method of unloading and/or loading a wafer in a semiconductor device manufacturing apparatus, pumping and/or purge operations are performed in a process chamber while the wafer is separated from a susceptor by a desired distance using a plurality of lift pins.