Abstract: Disclosed herein are a black photosensitive resin composition and a black column spacer prepared therefrom. The black photosensitive resin composition may form a cured film exhibiting good adhesion to a substrate, good height difference property, good surface roughness and high light shielding property (optical density), and may be effectively used for the formation of a cured film, particularly a black column spacer, of a liquid crystal display (LCD) or an organic light-emitting diode (OLED) display.

Abstract: Disclosed herein are a black photosensitive resin composition and a black column spacer prepared therefrom. The black photosensitive resin composition may form a cured film exhibiting good adhesion to a substrate, good height difference property, good surface roughness and high light shielding property (optical density), and may be effectively used for the formation of a cured film, particularly a black column spacer, of a liquid crystal display (LCD) or an organic light-emitting diode (OLED) display.

Abstract: A semi-fluoroalkyl group substituted organic semiconductor polymer and an organic thin film transistor including the same are disclosed. A structure in which hydrogen of only a terminal of an alkyl group is substituted with fluorine exhibits significantly increased hole mobility, and significantly improved properties in terms of thermal stability and chemical stability, as compared to a structure in which all hydrogens coupled to a thiophene ring are substituted with fluorine, or a structure in which hydrogen of the terminal thereof is not substituted with fluorine and only hydrogens of the remaining portion are coupled to the thiophene ring.

Abstract: A semi-fluoroalkyl group substituted organic semiconductor polymer and an organic thin film transistor including the same are disclosed. A structure in which hydrogen of only a terminal of an alkyl group is substituted with fluorine exhibits significantly increased hole mobility, and significantly improved properties in terms of thermal stability and chemical stability, as compared to a structure in which all hydrogens coupled to a thiophene ring are substituted with fluorine, or a structure in which hydrogen of the terminal thereof is not substituted with fluorine and only hydrogens of the remaining portion are coupled to the thiophene ring.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.