Abstract: Disclosed is a motor driving apparatus including: a motor; an inverter including a switching element for driving the motor; a controller for controlling the switching element; a resolver including an excitation winding and a detection winding; and a resolver chip applying an excitation signal to the excitation winding by inputting a periodic signal from the controller, and receiving a feedback signal from the detection winding, wherein the resolver chip determines the number of rotations of the motor based on a change in a pulse width of a detection signal resulting from a comparison between a voltage of the feedback signal and a preset voltage, and output a signal to the inverter for setting an inertial driving control mode according to the number of rotations of the motor in a failure state of the controller.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: Disclosed is an apparatus for excitation signal generation for a resolver. The apparatus includes a sine wave generator that generates a sine wave based on a square wave, an amplifier that amplifies the sine wave, a differential signal generator that converts, into a differential signal, the amplified sine wave, a driver that inputs the differential signal to a coil, and a processor that generates an excitation signal by increasing a voltage of the sine wave from a start voltage to a target voltage through at least one of the sine wave generator and the amplifier based on a transient current that flows into the coil in a transient response interval.

Abstract: A semiconductor package includes a substrate and a semiconductor chip disposed over the substrate. The substrate includes: a base layer including an upper surface facing the semiconductor chip; an upper ground electrode plate disposed over the upper surface of the base layer and configured to transmit a ground voltage to the semiconductor chip; and a dummy power pattern disposed in the upper ground electrode plate and having a side surface which is surrounded by the upper ground electrode plate and is spaced apart from the upper ground electrode plate with an insulating material between the dummy power pattern and the upper ground electrode plate. A ground voltage transmission path from the upper ground electrode plate to the semiconductor chip is spaced apart from the dummy power pattern.

Abstract: A semiconductor chip includes a chip body including a signal input/output circuit unit, a chip pad unit disposed on one surface of the chip body and including first and second chip pads having different surface areas from each other, and a chip pad selection circuit unit disposed in the chip body and electrically connected to the signal input/output circuit unit and the chip pad unit. The chip pad selection circuit unit is configured to select one chip pad of the first and second chip pads and electrically connect the selected one chip pad to the signal input/output circuit unit.

Abstract: A semiconductor chip includes a chip body including a signal input/output circuit, a chip pad structure disposed on a surface of the chip body, the chip pad structure including first and second chip pads, the two chip pads having different surface areas, and a chip pad selection circuit disposed in the chip body and electrically connected to the signal input/output circuit and the chip pad structure. The chip pad selection circuit is configured to selectively and electrically connect one of the first and second chip pads to the signal input/output circuit.

Abstract: A semiconductor chip includes a chip body including a signal input/output circuit unit, a chip pad unit disposed on one surface of the chip body and including first and second chip pads having different surface areas from each other, and a chip pad selection circuit unit disposed in the chip body and electrically connected to the signal input/output circuit unit and the chip pad unit. The chip pad selection circuit unit is configured to select one chip pad of the first and second chip pads and electrically connect the selected one chip pad to the signal input/output circuit unit.

Abstract: A semiconductor package includes a substrate and a semiconductor chip disposed over the substrate. The substrate includes: a base layer including an upper surface facing the semiconductor chip; an upper ground electrode plate disposed over the upper surface of the base layer and configured to transmit a ground voltage to the semiconductor chip; and a dummy power pattern disposed in the upper ground electrode plate and having a side surface which is surrounded by the upper ground electrode plate and is spaced apart from the upper ground electrode plate with an insulating material between the dummy power pattern and the upper ground electrode plate. A ground voltage transmission path from the upper ground electrode plate to the semiconductor chip is spaced apart from the dummy power pattern.

Abstract: A semiconductor package includes a substrate and a semiconductor chip disposed over the substrate. The substrate includes: a base layer including an upper surface facing the semiconductor chip; an upper ground electrode plate disposed over the upper surface of the base layer and configured to transmit a ground voltage to the semiconductor chip; and a dummy power pattern disposed in the upper ground electrode plate and having a side surface which is surrounded by the upper ground electrode plate and is spaced apart from the upper ground electrode plate with an insulating material between the dummy power pattern and the upper ground electrode plate. A ground voltage transmission path from the upper ground electrode plate to the semiconductor chip is spaced apart from the dummy power pattern.

Abstract: A semiconductor package includes a substrate and a semiconductor chip disposed over the substrate. The substrate includes: a base layer including an upper surface facing the semiconductor chip; an upper ground electrode plate disposed over the upper surface of the base layer and configured to transmit a ground voltage to the semiconductor chip; and a dummy power pattern disposed in the upper ground electrode plate and having a side surface which is surrounded by the upper ground electrode plate and is spaced apart from the upper ground electrode plate with an insulating material between the dummy power pattern and the upper ground electrode plate. A ground voltage transmission path from the upper ground electrode plate to the semiconductor chip is spaced apart from the dummy power pattern.

Abstract: A semiconductor package may include a DRAM chip mounted on a substrate; an interposer stacked over the DRAM chip and including redistribution structures; a nonvolatile memory chip stacked over the interposer; a memory controller chip mounted on the substrate, and including a control circuit for controlling the nonvolatile memory chip and first pads and second pads electrically coupled to the control circuit; first conductive coupling members configured to electrically couple bonding pads of the nonvolatile memory chip to the redistribution structures; second conductive coupling members configured to electrically couple the redistribution structures to the first pads; and third conductive coupling members configured to electrically couple the second pads to the substrate.

Abstract: A semiconductor package may include a DRAM chip mounted on a substrate; an interposer stacked over the DRAM chip and including redistribution structures; a nonvolatile memory chip stacked over the interposer; a memory controller chip mounted on the substrate, and including a control circuit for controlling the nonvolatile memory chip and first pads and second pads electrically coupled to the control circuit; first conductive coupling members configured to electrically couple bonding pads of the nonvolatile memory chip to the redistribution structures; second conductive coupling members configured to electrically couple the redistribution structures to the first pads; and third conductive coupling members configured to electrically couple the second pads to the substrate.

Abstract: An assembled substrate for a liquid crystal panel that may prevent failures to pads, or the like, when transferring the assembled substrate with cutting channels to a predetermined work station, a method of cutting the assembled substrate, and a liquid crystal panel manufactured by the method. The assembled substrate includes a thin film transistor (TFT) mother substrate including a plurality of TFT array substrates corresponding to liquid crystal unit panels, a color filter mother substrate coupled with the TFT mother substrate and including a plurality of color filter substrates corresponding to the liquid crystal unit panels, and dummy seal patterns interposed between the TFT mother substrate and the color filter mother substrate. The dummy seal patterns overlap with cutting channels for cutting the TFT mother substrate or the color filter mother substrate into the liquid crystal unit panels.