Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58?x1<3.0), ZnOx2 (1.0?x2<2.0), TiOx3 (1.5?x3<2.0), VOx4 (1.5?x4<2.0), TaOx5 (1.0?x5<2.5), WOx6 (2.0<x6<3.0), and a combination thereof.

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58?x1<3.0), ZnOx2 (1.0?x2<2.0), TiOx3 (1.5?x3<2.0), VOx4 (1.5?x4<2.0), TaOx5 (1.0?x5<2.5), WOx6 (2.0<x6<3.0), and a combination thereof.

Abstract: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Abstract: A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer.

Abstract: Methods of manufacturing semiconductor devices may include forming a first layer on a first active region (P-channel FET), forming a second layer on a second active region (N-channel FET), the first and second layers including a silicon germanium (SiGe) epitaxial layer sequentially stacked on a silicon (Si) epitaxial layer, forming a first contact hole in an interlayer insulating film including a first lower region exposing the SiGe epitaxial layer of the first layer, forming a second contact hole in the interlayer insulating film including a second lower region penetrating through the SiGe epitaxial layer of the second layer and exposing the Si epitaxial layer of the second layer, forming a first metal silicide film including germanium (Ge) in the first lower region, forming a second metal silicide film not including Ge in the second lower region simultaneously with the forming of the first metal silicide film.

Abstract: A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.

Abstract: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Abstract: Methods for fabricating a metal silicide layer and for fabricating a semiconductor device having such a metal silicide layer are provided wherein, in an embodiment, the method includes the steps of forming a metal layer on a substrate, performing a first thermal process on the substrate to allow the substrate and the metal layer to react with react other to form a first pre-metal silicide layer, removing an unreacted portion of the metal layer, and performing a second thermal process on the substrate to change the first pre-metal silicide layer into a second pre-metal silicide layer and then to melt the second pre-metal silicide layer to change the second pre-metal silicide layer into a metal silicide layer.

Abstract: Methods of manufacturing semiconductor devices may include forming a first layer on a first active region (P-channel FET), forming a second layer on a second active region (N-channel FET), the first and second layers including a silicon germanium (SiGe) epitaxial layer sequentially stacked on a silicon (Si) epitaxial layer, forming a first contact hole in an interlayer insulating film including a first lower region exposing the SiGe epitaxial layer of the first layer, forming a second contact hole in the interlayer insulating film including a second lower region penetrating through the SiGe epitaxial layer of the second layer and exposing the Si epitaxial layer of the second layer, forming a first metal silicide film including germanium (Ge) in the first lower region, forming a second metal silicide film not including Ge in the second lower region simultaneously with the forming of the first metal silicide film.

Abstract: Provided are a mesoporous carbon containing at least one heteroatom boron and phosphorus, a manufacturing method thereof, and a fuel cell using the same. The mesoporous carbon contains a heteroatom such as boron and phosphorous to reduce sheet resistance, and thus can efficiently transfer electric energy. Such a mesoporous carbon can be used as a conductive material of electrodes for fuel cells. When the mesoporous carbon is used as a support for catalysts of electrodes, a supported catalyst containing the support can be used to manufacture a fuel cell having high efficiency.

Abstract: Semiconductor devices include a substrate having first and second active regions; a P-channel transistor associated with the first active region and including at least one of source and drain regions; an N-channel field-effect transistor associated with the second active region and including at least one of the source and drain regions; first and second contact pad layers each including silicon (Si) and SiGe epitaxial layers on the source and drain regions the SiGe epitaxial layers being sequentially stacked on the Si epitaxial layers; an interlayer insulating film; a first metal silicide film on the SiGe epitaxial layer of the P-channel transistor and a second metal silicide film on the Si epitaxial layer of the N-channel transistor; and contact plugs on the first and second metal silicide films.

Abstract: A sulfur-containing mesoporous carbon that has mesopores with an average diameter of 2 to 10 nm, a method of preparing the same, a catalyst containing the mesoporous carbon as a catalyst support, and a fuel cell using the catalyst in which the sulfur-containing mesoporous carbon has a good affinity for and adhesion to catalyst particles so as to strongly support the catalyst particles due to the sulfur atoms substituting for carbons in an OMC carbon skeleton structure. The growth of metal catalyst particles is prevented when heat-treating the metal catalyst particles. The catalyst using the sulfur-containing mesoporous carbon can be applied to a fuel cell to prevent a reduction in catalytic activity due to increased particle size by an accumulation of catalyst particles. The catalyst containing the sulfur-containing mesoporous carbon as a catalyst support can be used to manufacture a fuel cell having an improved performance.

Abstract: A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer.

Abstract: A mesoporous carbon is prepared by mixing a carbon precursor, an acid, and a solvent to obtain a carbon precursor mixture; impregnating an ordered mesoporous silica (OMS) with the carbon precursor mixture; carbonizing the impregnated OMS at 800 to 1300° C. by irradiating microwave energy with a power of 100 to 2000 W thereon to form an OMS-carbon composite; and removing the mesoporous silica from the OMS-carbon composite. The method of preparing a mesoporous carbon can significantly reduce a carbonization time by carbonizing a carbon precursor using microwave energy in a silica template compared to a conventional method using a heat treatment. A supported catalyst and a fuel cell include the mesoporous carbon.

Abstract: A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.

Abstract: Provided are semiconductor devices having low resistance contacts and methods of manufacturing the same.

Abstract: A method for manufacturing a carbon molecular sieve with increased microporosity; a method for manufacturing a carbon molecular sieve with increased microporosity and improved structural regularity; a carbon molecular sieve with increased microporosity; a carbon molecular sieve with increased microporosity and improved structural regularity; a catalyst for a fuel cell using the carbon molecular sieve; and a fuel cell using the catalyst are provided.

Abstract: A non-volatile semiconductor memory device includes a lower electrode, an upper electrode, a resistive layer pattern between the lower electrode and the upper electrode, and a filament seed embedded in the resistive layer pattern. The filament seed includes at least one of a carbon nanotube, a nanowire and a nanoparticle.

Abstract: Provided are a mesoporous carbon and a method of preparing the same, where the mesoporous carbon is prepared using phenanthrene as a carbon source and a mesoporous silica as a template. The mesoporous carbon has a significantly low plane resistance, which can be obtained without sacrificing other physical properties, and thus obtains a high conductivity and effectively transfers electrical energy. Accordingly, a fuel cell electrode or a fuel cell which is produced using the mesoporous carbon as a conductive material has high efficiency. Furthermore, the mesoporous carbon may be used in various electrochemical devices as a conductive material.

Abstract: Provided is a magnetic recording medium. The magnetic recording medium includes a substrate, a recording layer disposed on the substrate for magnetic recording, and a carbon protection layer, which includes a carbon layer and a blocking layer disposed in the carbon layer to block infiltration of external impurities, disposed on the recording layer. Since the blocking layer is disposed in the carbon layer, a thickness of the carbon protection layer can be reduced while a sufficient hardness to protect the recording layer can be ensured, and moreover, a softness of the surface of the carbon protection layer can be improved.