Abstract: A semiconductor memory device capable of performing a partial self refresh and semiconductor memory system including same is provided. The semiconductor memory device includes: a memory circuit including a memory array; a skip address storage unit storing an address of an excluded region not requiring refresh in the memory array as a skip address; a refresh address generator providing an address of a region of the memory array requiring refresh as a refresh address; and an address comparator receiving and comparing the skip address and refresh address, and providing a refresh control signal to the memory circuit based on the comparison.

Abstract: A semiconductor memory device capable of performing a partial self refresh and semiconductor memory system including same is provided. The semiconductor memory device includes: a memory circuit including a memory array; a skip address storage unit storing an address of an excluded region not requiring refresh in the memory array as a skip address; a refresh address generator providing an address of a region of the memory array requiring refresh as a refresh address; and an address comparator receiving and comparing the skip address and refresh address, and providing a refresh control signal to the memory circuit based on the comparison.

Abstract: A repair circuit and related method of repair are disclosed. In the repair circuit, row repair or column repair control units are selectively actuated to perform respective repair functions within a semiconductor memory device in relation to a commonly provided defective address. Both post-package defects and/or before package defects may be repaired in response to the defective address.

Abstract: A repair circuit and a method of repairing defects in a semiconductor memory device are disclosed. The repair circuit of a semiconductor memory device includes an address generating unit, an address electrical fuse (e-fuse) box unit, a row/column selecting e-fuse unit, a row repair control unit, and a column repair control unit. The address generating unit generates a row address or a column address in response to a control signal, the address e-fuse box unit stores a defective address after packaging, and the row/column selecting e-fuse unit generates a select signal for determining whether the defective address corresponds to a row defect or a column defect. The row repair control unit compares the defective address after packaging with the row address in response to a first state of the select signal, and the column repair control unit compares the defective address after packaging with the column address in response to a second state of the select signal.