Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: Various embodiments regarding an electronic device and a content providing method in an electronic device are described. An electronic device according to an embodiment comprises: a communication unit configured to transmit content and receive additional information of the content; a control unit configured to acquire information related to the secondary of the content on the basis of the additional information; and a display unit configured to display the content and the information related to the secondary of the content. Other various embodiments are also possible.

Abstract: A method of an electronic device is provided. The method includes generating a key code by receiving a selection on at least one area from among areas of an image displayed, decrypting an encrypted message included in the image by using the generated key code, and determining whether to output the encrypted message by determining whether a hash code for the decrypted message is identical to a hash code for inputted text information.

Abstract: Various embodiments regarding an electronic device and a content providing method in an electronic device are described. An electronic device according to an embodiment comprises: a communication unit configured to transmit content and receive additional information of the content; a control unit configured to acquire information related to the secondary of the content on the basis of the additional information; and a display unit configured to display the content and the information related to the secondary of the content. Other various embodiments are also possible.

Abstract: An image sensor includes a light-electron conversion unit, a signal generation unit, and a selection unit. The light-electron conversion unit generates photo-charges from incident light. The signal generation unit accumulates photo-charges from the converter in a storage node during a detection period, and then generates a first analog signal and a second analog signal during an output period. The analog signals are generated based on an amount of photo-charges accumulated in the storage node. The selection unit generates an image signal based on one of the first analog signal and the second analog signal.

Abstract: Provided is an apparatus and method for sensing a three-dimensional (3D) object. The apparatus includes a display unit including a first sensing space in which a sensitivity with respect to a proximity touch is higher than a threshold value and a second sensing space in which a sensitivity with respect to the proximity touch is lower than the threshold value, on a stereoscopic space on which at least one 3D object is disposed and a controller for moving predetermined 3D objects in a predetermined direction if a proximity touch is generated on the second sensing space, detecting coordinates of a 3D object corresponding to a proximity touch generated on the first sensing space if the proximity touch generated on the second sensing space is moved and generated on the first sensing space, and performing a function corresponding to the 3D object.

Abstract: A method of an electronic device is provided. The method includes generating a key code by receiving a selection on at least one area from among areas of an image displayed, decrypting an encrypted message included in the image by using the generated key code, and determining whether to output the encrypted message by determining whether a hash code for the decrypted message is identical to a hash code for inputted text information.

Abstract: An image sensor includes a light-electron conversion unit, a signal generation unit, and a selection unit. The light-electron conversion unit generates photo-charges from incident light. The signal generation unit accumulates photo-charges from the converter in a storage node during a detection period, and then generates a first analog signal and a second analog signal during an output period. The analog signals are generated based on an amount of photo-charges accumulated in the storage node. The selection unit generates an image signal based on one of the first analog signal and the second analog signal.

Abstract: An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.

Abstract: Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

Abstract: Provided is an apparatus and method for sensing a three-dimensional (3D) object. The apparatus includes a display unit including a first sensing space in which a sensitivity with respect to a proximity touch is higher than a threshold value and a second sensing space in which a sensitivity with respect to the proximity touch is lower than the threshold value, on a stereoscopic space on which at least one 3D object is disposed and a controller for moving predetermined 3D objects in a predetermined direction if a proximity touch is generated on the second sensing space, detecting coordinates of a 3D object corresponding to a proximity touch generated on the first sensing space if the proximity touch generated on the second sensing space is moved and generated on the first sensing space, and performing a function corresponding to the 3D object.

Abstract: Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.

Abstract: An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.

Abstract: Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.

Abstract: A method for rendering an object in a 3D graphic terminal includes constructing camera coordinates, based on vertex information of objects existing in a 3D space, and selecting one object in a left frustum and a right frustum, based on the constructed camera coordinates, wherein the left frustum is defined centered on a left virtual camera viewpoint, and the right frustum is defined centered on a right virtual camera viewpoint. The method further includes determining a binocular disparity by projecting vertexes of the selected object in the left frustum and the right frustum, and adjusting frustum parameters of the left virtual camera and the right virtual camera when the determined binocular disparity is greater than an allowable binocular disparity.

Abstract: A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.

Abstract: An apparatus and method display a world clock on the basis of an Augmented Reality (AR) scheme in a portable terminal. The method for displaying information in the portable terminal includes obtaining camera image data from a camera. The method also include searching for a city corresponding to a camera location and a camera viewpoint direction on the basis of a memory. The method further includes obtaining information on the found city and displaying the obtained information on the found city by compositing the information into the obtained camera image data.