Abstract: Disclosed is a high pressure tank configured to store hydrogen and includes a metal hydride (MH) tank capable of storing hydrogen, mounted therein. First and second solenoid valves are provided at both ends of the high pressure tank. A fuel cell stack is then connected to the buffer tank so that hydrogen from the high pressure tank or the MH tank is supplied to the stack through the buffer tank.

Abstract: The present invention provides a fire safety apparatus for a high-pressure gas storage system which can suitably ensure the fire safety of the high-pressure tank. Preferably, a flame transfer member having superior flammability is provided outside the high-pressure tank having a tank valve on a first end thereof. The flame transfer member extends a second end of the high-pressure tank to the tank valve, so that when a fire occurs, the flame transfer member rapidly burns creating flames and transfers heat from the origin of the fire to a PRD (pressure relief device) provided on the tank valve.

Abstract: The present invention provides a hydrogen supply system for a fuel cell which can compensate for a change in temperature, caused by heat generated when a high pressure tank is charged and discharged with hydrogen, using a metal hydride (MH) tank providing high hydrogen storage density, mounted in the high pressure tank such that hydrogen is to be discharged from the MH tank when hydrogen is charged to the high pressure tank, and hydrogen is to be charged to the MH tank when hydrogen is discharged from the high pressure tank.

Abstract: The present invention provides a hydrogen storage system for a vehicle which is readily attachable to and detachable from the vehicle. The hydrogen storage system includes a plurality of hydrogen tanks filled with hydrogen at the outside and is mounted on the top of a rear underfloor of the vehicle in the form of a cartridge. For this purpose, the present invention provides a hydrogen storage system for a vehicle, including a hydrogen storage housing, accommodating a hydrogen storage material filled with hydrogen at the outside and easily attached to and detached from the vehicle using a quick connector.

Abstract: The present invention provides a hydrogen storage system using a metal hydride (MH), which can increase volumetric storage density of hydrogen and total hydrogen storage capacity and improve system packaging. For this purpose, the present invention provides a hydrogen storage system for a fuel cell vehicle, the hydrogen storage system including: an outer space filled with a first storage alloy powder that is able to release hydrogen at a high temperature; an inner space filled with a second storage alloy powder that is able to release hydrogen only with heat generated from a fuel cell stack; a metal filter disposed between the outer and inner spaces so as to divide the outer and inner spaces; a second heat exchange tube provided between the fuel cell stack and a radiator to constitute a cooling loop and arranged along a longitudinal direction of the inner space; and an independent heat exchange loop independently connected to the outer space for the hydrogen release of the first storage alloy powder.

Abstract: Disclosed is a method for forming a bit-line of a semiconductor device. In a line patterning process for forming a bit-line in a DRAM (Dynamic Random Access Memory) of a semiconductor device, a barrier metal layer and a tungsten layer are sequentially formed on an interlayer insulating film comprising a contact hole to fill the contact hole by a CVD (Chemical Vapor Deposition) method. Then, the barrier metal layer and the tungsten layer are removed until the interlayer insulating film is exposed, and a tungsten layer having small thickness is re-formed on the exposed interlayer insulating film by a PVD (physical Vapor Deposition) method. As a result, the bit-line area is reduced as much as the barrier metal layer removed from the upper portion of interlayer insulating film, thereby having low bit-line capacitance.

Abstract: A method for forming a recess gate of a semiconductor device is disclosed. The method for forming a recess gate of a semiconductor device comprises forming a polysilicon layer pattern covering a contact region on a semiconductor substrate, etching a predetermined thickness of the semiconductor substrate in the active region using the polysilicon layer pattern as an etching mask to form a recess gate region, and forming and patterning the gate polysilicon layer, the gate conductive layer and the gate hard mask layer to form a recess gate.

Abstract: The invention relates to a resin tube that is inevitably buried during engineering works for electrical and communication line facility.

Abstract: The present invention discloses a method for fabricating a SOI wafer.

Abstract: A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a first impurity region of a first conductivity disposed in a central portion thereof and intrinsic regions disposed at the both sides of the first impurity region; a second insulating layer formed over the first silicon layer; a second silicon layer formed over the second insulating layer, the second silicon layer including a second impurity region of a second conductivity disposed in a central portion thereof and third impurity regions of first conductivities disposed at the both sides of the second impurity region; a third insulating layer formed over the second impurity region; and a polysilicon layer doped with impurity ions of first conductivities, formed over the third insulating layer.

Abstract: Disclosed is a semiconductor device having low voltage characteristic and advantageous integrity simultaneously. The semiconductor device comprises a silicon-on-insulator (SOI) substrate of a stack structure comprising a base layer as a means for supporting, a buried oxide layer, and a semiconductor layer providing an active region; and a first transistor and a second transistor formed on the active region of the SOI substrate, wherein the first and second transistors are formed as a stack structure on one active region and they share one gate electrode, a drain region of the second transistor is electrically connected to the gate electrode and a source region of the second transistor is electrically connected to the active region.

Abstract: Disclosed is a semiconductor device having low voltage characteristic and advantageous integrity simultaneously. The semiconductor device comprises a silicon-on-insulator (SOI) substrate of a stack structure comprising a base layer as a means for supporting, a buried oxide layer, and a semiconductor layer providing an active region; and a first transistor and a second transistor formed on the active region of the SOI substrate, wherein the first and second transistors are formed as a stack structure on one active region and they share one gate electrode, a drain region of the second transistor is electrically connected to the gate electrode and a source region of the second transistor is electrically connected to the active region.

Abstract: A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a first impurity region of a first conductivity disposed in a central portion thereof and intrinsic regions disposed at the both sides of the first impurity region; a second insulating layer formed over the first silicon layer; a second silicon layer formed over the second insulating layer, the second silicon layer including a second impurity region of a second conductivity disposed in a central portion thereof and third impurity regions of first conductivities disposed at the both sides of the second impurity region; a third insulating layer formed over the second impurity region; and a polysilicon layer doped with impurity ions of first conductivities, formed over the third insulating layer.