Abstract: A light emitting element having a shape extending in a direction includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and second semiconductor layers, a first electrode layer on a second surface opposite to a first surface of the first semiconductor layer facing the active layer, a second electrode layer on a second surface opposite to a first surface of the second semiconductor layer facing the active layer, and an insulating film surrounding a side surface of the active layer, a side surface of the first electrode layer, and a side surface of the second electrode layer, wherein a first area including the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area including the insulating film adjacent to a side surface of the first electrode layer.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: A light emitting element, a display device including the same, and a method of manufacturing the display device display device are provided. The light emitting element includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a light emitting layer on the second semiconductor layer, a third semiconductor layer on the light emitting layer, an element electrode layer on the third semiconductor layer, a connection electrode on the element electrode layer, a first insulating layer around a side surfaces of the first semiconductor layer and the second semiconductor layer, a contact electrode around a side surface of the first insulating layer and the side surface of the second semiconductor layer, and a second insulating layer around the side surfaces of the second semiconductor layer, and side surfaces of the light emitting layer, the third semiconductor layer, the element electrode layer, and the connection electrode.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A light emitting diode includes a first end and a second end facing each other, a current blocking layer, a first semiconductor layer, an active layer, a second semiconductor layer, and an insulating film surrounding outer circumferential surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer and exposing at least a portion of the current blocking layer and at least a portion of the first semiconductor layer at the second end. The current blocking layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed in a direction from the second end to the first end.

Abstract: A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

Abstract: A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods.

Abstract: A light emitting element, a display device including the same and a method of fabricating the same. The light emitting element may include an element rod including a first semiconductor layer, an active layer, and a second semiconductor layer. First and second contact electrodes may be respectively disposed on a first end surface and a second and opposite end surface of the element rod. A reflection layer may surround the first contact electrode and the element rod. An inner insulating layer may be disposed inside the reflection layer and surround the first contact electrode and the element rod. An outer insulating layer external to the reflection layer and may surround the first contact electrode and the element rod. A first inclination of side surfaces of the first semiconductor layer and the active layer and a second inclination of a side surface of the second semiconductor layer may be different.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

Abstract: A light emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a first insulating layer surrounding the first semiconductor layer, the second semiconductor layer, and the active layer, and a first thickness of the first insulating layer surrounding the first semiconductor layer is different from a second thickness of the first insulating layer surrounding the second semiconductor layer.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device.

Abstract: A light-emitting device includes a light-emitting device core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an element active layer disposed between the first semiconductor layer and the second semiconductor layer; a first insulating layer disposed on the side surface of the light-emitting device core to surround the side surface of the light-emitting device core, and having first fixed charges; and a second insulating layer surrounding the outer side surface of the first insulating layer, and including a material having second fixed charges different from the first fixed charges.

Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device.

Abstract: A light-emitting device includes: a light-emitting device core including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode layer on the second semiconductor layer of the light-emitting device core, and an insulating film around a side surface of the light-emitting device core, wherein a side surface of the electrode layer protrudes outward from a side surface of the second semiconductor layer.