Abstract: A memory device configured as a dynamic random access memory is provided, comprising a first semiconductor device layer comprising a first bit cell and a second semiconductor device layer comprising a second DRAM bit cell. Further, at least one of a first and second interconnecting structure is provided, the first interconnecting structure extending vertically between the first and second semiconductor device layer and being arranged to form a write word line common to the gate terminal of the write transistors of the first and second bit cells, and the second interconnecting structure extending vertically between the first and second semiconductor device layer and being arranged to form a read word line common to a first source/drain terminal of the read transistors of the first and second bit cells.

Abstract: A synapse circuit with an arrayed structured memory for machine learning applications is disclosed. The synapse circuit comprises a controlled variable resistance, a controlled switch connected to a contact terminal of the controlled variable resistance, and a memory cell for storing a weight variable. The memory cell is operatively connected to a control terminal of the controlled switch. A control terminal of the controlled variable resistance is configured for receiving an activation signal. The controlled variable resistance has a first resistance value and a second resistance value substantially larger than the first resistance value. A ratio of the second resistance value to the first resistance value is at least one hundred.

Abstract: A synapse circuit with an arrayed structured memory for machine learning applications is disclosed. The synapse circuit comprises a controlled variable resistance, a controlled switch connected to a contact terminal of the controlled variable resistance, and a memory cell for storing a weight variable. The memory cell is operatively connected to a control terminal of the controlled switch. A control terminal of the controlled variable resistance is configured for receiving an activation signal. The controlled variable resistance has a first resistance value and a second resistance value substantially larger than the first resistance value. A ratio of the second resistance value to the first resistance value is at least one hundred.

Abstract: The disclosed technology relates to a memory device for a dynamic random access memory, or DRAM. In one aspect, the memory device includes a substrate supporting a semiconductor device layer in which a plurality of semiconductor devices are formed. The memory device may further include an interconnection portion formed above the substrate and including a number of metallization levels and dielectric layers, the interconnection portion being adapted to interconnect said semiconductor devices. The memory device may further include a plurality of bit cell stacks arranged in the interconnection portion, each bit cell stack including a plurality of bit cells. Further, such bit cells may include elements such as a charge storage element, a write transistor, and a read transistor.

Abstract: The disclosed technology relates to a memory device for a dynamic random access memory, or DRAM. In one aspect, the memory device includes a substrate supporting a semiconductor device layer in which a plurality of semiconductor devices are formed. The memory device may further include an interconnection portion formed above the substrate and including a number of metallization levels and dielectric layers, the interconnection portion being adapted to interconnect said semiconductor devices. The memory device may further include a plurality of bit cell stacks arranged in the interconnection portion, each bit cell stack including a plurality of bit cells. Further, such bit cells may include elements such as a charge storage element, a write transistor, and a read transistor.