Abstract: A polypropylene composite resin composition and a molded article made from same have improved impact resistance. The composition includes: a first propylene-ethylene block copolymer resin having a melt index of 20 to 40 g/10 min (230° C., 2.16 kg); a second propylene-ethylene block copolymer resin having a melt index of 5 to 15 g/10 min (230° C., 2.16 kg); a thermoplastic elastomer including at least one of a styrenic thermoplastic elastomer or an olefinic thermoplastic elastomer; an inorganic filler; and a nucleating agent in appropriate amounts.

Abstract: Disclosed are a method and device for managing a project by using data merging. A project is efficiently operated by dividing a project based on a minimum unit task and designing a plurality of child projects connected in sequential order such that a plurality of child projects proceed in order.

Abstract: The present invention relates to a pharmaceutical composition for combined administration of melatonin and prostaglandin E2 (PGE2) for the treatment of intestinal epithelial injury diseases, and it is confirmed that when intestinal epithelial organoids are treated in combination with melatonin and PGE2, the expression of revival stem cell markers increases more than when the two substances are treated alone, and therefore it can be usefully used as a composition for preventing, treating or improving intestinal epithelial injury diseases.

Abstract: Disclosed is a radar antenna including an antenna body including a first plate and a second plate; a slot radiation part and a slot reception part formed in the first plate; a transmission port and a reception port formed in the second plate; and a waveguide formed by assembling the first and second plates. The slot radiation part includes a first slot radiation part configured to radiate a radio wave in a first detection range, and a second slot radiation part configured to radiate radio waves in a second detection range having a larger width and distance than the first detection range.

Abstract: A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.

Abstract: A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.

Abstract: A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.