Abstract: A method of controlling a hybrid electric vehicle includes checking a vehicle driving state and determining whether to satisfy a predetermined engine clutch engagement prohibition condition, by a controller, generating and outputting a control command for prohibiting engine clutch engagement and maintaining an engine clutch in an open state, by the controller, when it is determined that the predetermined engine clutch engagement prohibition condition is satisfied from the vehicle driving state, and controlling to maintain the engine clutch in the open state that is a power cut-off state, by the control command output from the controller.

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: A platform service system and method for integrated battery management. The platform service system collects battery characteristic data of an electric vehicle through a network and accumulatively store the same to be matched with a battery identification code, calculates a current SOH of a battery by analyzing the battery characteristic data and store the same in a SOH history DB to be matched with the battery identification code, inquires the SOH history DB using the battery identification code to determine a current SOH when a reuse grade calculation request is received from a client along with the battery identification code, determines a reuse grade corresponding to the current SOH with reference to predefined reuse grade information for each SOH, and transmits the reuse grade to the client.

Abstract: Disclosed are a mount control system and method for vehicles in which a camera of an electronically controlled suspension system with road preview photographs a road surface condition of a road ahead of a vehicle, a suspension controller determines a road surface state of the road based on photographed information of the camera, and a mount controller controls semi-active mounts to be in an on state or in an off state based on road surface state determination information transmitted from the suspension controller and values detected by wheel acceleration sensors mounted on wheels of the vehicle, so as to improve not only NVH performance but also driving vibration damping performance depending on the road surface state.

Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on are fresh rate control signal. Thus, the display device provides improved visibility.

Abstract: A catalyst electrode for production of 2,5-furandicarboxylic acid according to an embodiment of the present invention includes: a first metal substrate; and a second metal hydroxide coating layer located on a surface of the first metal substrate, wherein the first metal substrate includes one or more micro-sized first metal particles on the surface thereof, and the second metal hydroxide coating layer may be located on a surface of the first metal particles.

Abstract: A pyrolysis system for waste includes: a pyrolysis apparatus configured to receive waste and generate combustible gas by pyrolyzing the received waste; an emulsification apparatus connected to the pyrolysis apparatus and configured to produce pyrolysis oil by cooling condensable gas among the combustible gas generated by the pyrolysis apparatus and discharge non-condensable gas; and a combustion furnace connected to the emulsification apparatus and configured to receive and combust the non-condensable gas discharged from the emulsification apparatus, where the combustion furnace is configured to generate hot air by combusting the non-condensable gas, and supply the hot air to the pyrolysis apparatus to pyrolyze the waste.

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: The inventive concept provides an inkjet printing method. The inkjet printing method for discharging an ink on a substrate using a head having a plurality of nozzles formed thereon includes determining a grade of nozzles by measuring a discharge performance of the nozzles, which is a grading step; selecting a use nozzle that can participate in printing the substrate among the nozzles based on the grade determined at the grading step, which is a nozzle selecting step; and discharging the ink on the substrate using at least one nozzle among use nozzles, which is a printing step.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.

Abstract: The inventive concept provides an inkjet printing method. The inkjet printing method for discharging an ink on a substrate using a head having a plurality of nozzles formed thereon includes determining a grade of nozzles by measuring a discharge performance of the nozzles, which is a grading step; selecting a use nozzle that can participate in printing the substrate among the nozzles based on the grade determined at the grading step, which is a nozzle selecting step; and discharging the ink on the substrate using at least one nozzle among use nozzles, which is a printing step.

Abstract: A semiconductor device including a substrate; first and second active patterns on the substrate, extending in a first direction and spaced apart in a second direction; gate electrodes on the first and second active patterns and extending in the second direction; a first gate separation structure between the first and second active patterns, extending in the first direction, and separating the gate electrodes; and a first element separation structure between the gate electrodes, extending in the second direction, and separating the second active pattern, wherein a distance to a first side of a first portion of the first gate separation structure is smaller than a distance to the first side of a second portion of the first gate separation structure, and a distance to the second side of the first portion is smaller than a distance from the second active pattern to the second side of the second portion.

Abstract: An electrochemical electrode according to the present invention may prevent agglomeration and desorption of a catalyst even when a catalyst in a particle form is used, because a protective layer containing hydrogel is used, such that stability may be secured, thereby implementing an electrode having a long duration.

Abstract: The present invention relates to an acoustic wave transmission device for moving a fluid or fine particles inside the fluid to a desired position using acoustic waves, and more particularly, to an acoustic wave transmission device including an acoustic wave transmission medium that minimizes acoustic wave interference due to the acoustic wave transmission medium by reducing reflection and refraction that may be generated when acoustic waves pass through the acoustic wave transmission medium in which a fluid is accommodated, and a manufacturing method of the acoustic wave transmission medium.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes forming a chalcogenide layer, forming a first conductive layer on the chalcogenide layer, and increasing a density of an interface between the chalcogenide layer and the first conductive layer by injecting or irradiating ions onto the interface.