Patents by Inventor Hyung Sun Hwang

Hyung Sun Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250056464
    Abstract: A method of a terminal may comprise: selecting one of a TN base station or NTN base station as a first base station; performing a first access registration procedure between the terminal and a core network through the first base station; identifying whether the core network supports dual-steering, based on a result of the first access registration procedure; in response to identifying that the core network supports dual-steering, performing a second access registration procedure between the terminal and the core network through a second base station other than the first base station among the TN base station or the NTN base station; and in response to a success of the second access registration procedure, performing a multiple access (MA) protocol data unit (PDU) session establishment procedure according to dual-steering through the first base station.
    Type: Application
    Filed: August 9, 2024
    Publication date: February 13, 2025
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jae Wook SHIN, Sook Yang KANG, Chul PARK, Myungsan BAE, Hyung Deug BAE, JaeSheung SHIN, Sung-Min OH, Kwang Ryul JUNG, You Sun HWANG
  • Patent number: 8298842
    Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: October 30, 2012
    Assignee: LG Display Co., Ltd.
    Inventors: Su Hyoung Son, Kyoung Jin Kim, Won Keun Cho, Eun Mi Ko, Hyung Sun Hwang
  • Publication number: 20120070924
    Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.
    Type: Application
    Filed: December 22, 2010
    Publication date: March 22, 2012
    Inventors: Su Hyoung SON, Kyoung Jin Kim, Won Keun Cho, Eun Mi Ko, Hyung Sun Hwang
  • Publication number: 20110303931
    Abstract: Disclosed are a semiconductor light emitting diode and a method for fabricating the same. The method comprises forming a crystalline nitride semiconductor layer on a substrate, forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semiconductor layer, forming an n-type nitride semiconductor layer on the crystalline nitride semiconductor layer, forming an active layer on the n-type nitride semiconductor layer, and forming a p-type nitride semiconductor layer on the active layer.
    Type: Application
    Filed: December 23, 2010
    Publication date: December 15, 2011
    Inventors: Ho-Jae KANG, Da-Woon Jung, Jong-Bin Kim, Hyung-Sun Hwang, Chung-Hoon Park