Abstract: A server according to an embodiment includes a processor configured to receive a friend add request for a target account from a user terminal accessed with a user account; based on one of the user account and the target account being a protected account, transmit an approval request for the friend add request to a protector account connected to the protected account; and based on receiving a reply to the approval request from the protector terminal, add the target account to a friend list of the user account.

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentratedly received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.

Abstract: Disclosed herein is a technique for bonding chips made of plastic materials by taking advantage of a photothermal effect of a graphene-copper sulfide composite. Using a photothermal adhesive composition containing the composite, microfluidic chips that pass fluids therethrough with neither leakage nor deformation can be effectively fabricated.

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentratedly received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentratedly received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.

Abstract: The present disclosure provides a blood vessel-mimicking microfluidic chip for cell co-culture and a use thereof, wherein the microfluidic chip of the present disclosure is a microfluidic chip capable of co-culturing vascular endothelial cells and cancer cells, and can mimic normal vascular tissue, cancer tissue, and cancer-metastatic vascular tissue, and therefore can be widely used in studies associated with cancer, and especially, is suitable in studies on cancer metastasis, intravenous injection environments for cancer treatment, photothermal therapeutic effects on cancer cell, and the like.

Abstract: The present disclosure proposes a server that supports payments of a plurality of users. The server may acquire first payment information from a first terminal, request a payment server to process a first payment, deliver sales information and payment status information to a shop terminal and terminals of the remaining users, deliver the payment status information to the first terminal, acquire second payment information from a second terminal, request the payment server to process a second payment, deliver updated payment status information to the terminals, deliver a first notification indicating that the payment of the total amount has been completed to the shop terminal, acquire a second notification indicating confirmation of the payment completion from the shop terminal, and deliver a third notification indicating confirmation of the payment completion to the terminals of the plurality of users.

Abstract: A memory cell array may include a normal cell array and a spare cell array, the normal cell array having a plurality of normal memory cells connected to normal lines and the spare memory cell array having a plurality of spare memory cells connected to spare lines configured to replace a failed normal memory cell with a spare memory cell. A spare line address encoding circuit may be configured to generate a spare line address which encodes spare line enable signals being applied when a spare line replacing a normal line is activated to indicate a physical location of the spare line being activated. A spare line adjacent address generator may be configured to generate spare line adjacent address based on the spare line address, and to activate spare lines physically adjacent to the activated spare line.

Abstract: Provided is a method of controlling release of nitric oxide, and more particularly, to a method of selectively releasing nitric oxide depending on a change in pH using calcium phosphate. The method of selectively releasing nitric oxide according to the present invention may stably deliver nitric oxide to a desired site, and induce release of nitric oxide by a change in pH, thereby making it possible to improve a therapeutic effect while preventing a loss of nitric oxide.

Abstract: Disclosed herein are embodiments of systems and methods for making silicon substrates. The disclosed systems use a unique combination of induction heating and crucible materials to produce silicon substrates in short time periods. The disclosed methods are cost-efficient and time-efficient and can be used to obtain pure silicon substrates having a desirable thinness for commercial use.

Abstract: A memory cell array may include a normal cell array and a spare cell array, the normal cell array having a plurality of normal memory cells connected to normal lines and the spare memory cell array having a plurality of spare memory cells connected to spare lines configured to replace a failed normal memory cell with a spare memory cell. A spare line address encoding circuit may be configured to generate a spare line address which encodes spare line enable signals being applied when a spare line replacing a normal line is activated to indicate a physical location of the spare line being activated. A spare line adjacent address generator may be configured to generate spare line adjacent address based on the spare line address, and to activate spare lines physically adjacent to the activated spare line.

Abstract: Provided is a method of controlling release of nitric oxide, and more particularly, to a method of selectively releasing nitric oxide depending on a change in pH using calcium phosphate. The method of selectively releasing nitric oxide according to the present invention may stably deliver nitric oxide to a desired site, and induce release of nitric oxide by a change in pH, thereby making it possible to improve a therapeutic effect while preventing a loss of nitric oxide.

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentrically received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.