Patents by Inventor Hyungwook Choi
Hyungwook Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250096583Abstract: This electronic device may comprise: a first battery cell and a second battery cell connected in series to the first battery cell; a charging circuit configured to supply power of a first specified voltage from the outside to the first battery cell and the second battery cell; and at least one processor, comprising processing circuitry, individually and/or collectively, configured to control an overcharging protection operation voltage of the first battery cell and the second battery cell to a second specified voltage, wherein at least one processor, individually and/or collectively, is configured to; identify the voltage of the first battery cell and the voltage of the second battery cell while the first battery cell and the second battery cell are charged using the power of the first specified voltage; accumulate the number of times of overcharging protection operation for a battery cell having a voltage higher than the second specified voltage, based on at least one voltage among the voltage of the first bType: ApplicationFiled: December 2, 2024Publication date: March 20, 2025Inventor: Hyungwook CHOI
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Publication number: 20250098362Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.Type: ApplicationFiled: September 25, 2024Publication date: March 20, 2025Applicant: Trina Solar Co., Ltd.Inventors: Sungjin KIM, Juhwa CHEONG, Hyungwook CHOI, Wonjae CHANG
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Publication number: 20250048777Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.Type: ApplicationFiled: October 22, 2024Publication date: February 6, 2025Applicant: TRINA SOLAR CO., LTD.Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
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Publication number: 20230217231Abstract: A wireless communication system includes a server supporting multi-service, multi-advertising, and multi-connection and a plurality of client devices simultaneously receiving a first advertising signal and a second advertising signal from the server through Bluetooth Low Energy (BLE) communication, wherein the first advertising signal includes a first media access control (MAC) address, and the second advertising signal includes a second MAC address different from the first MAC address.Type: ApplicationFiled: August 11, 2022Publication date: July 6, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Hyungwook CHOI
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Publication number: 20230207712Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.Type: ApplicationFiled: February 13, 2023Publication date: June 29, 2023Applicant: Shangrao Jinko solar Technology Development Co., LTDInventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim
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Patent number: 11616153Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.Type: GrantFiled: January 17, 2019Date of Patent: March 28, 2023Assignee: Shangrao Jinko solar Technology Development Co., LTDInventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim
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Publication number: 20220262967Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.Type: ApplicationFiled: April 9, 2020Publication date: August 18, 2022Inventors: Sungjin KIM, Juhwa CHEONG, Hyungwook CHOI, Wonjae CHANG
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Patent number: 11239379Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.Type: GrantFiled: June 28, 2019Date of Patent: February 1, 2022Assignee: LG ELECTRONICS INC.Inventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim
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Patent number: 11133426Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.Type: GrantFiled: June 28, 2019Date of Patent: September 28, 2021Assignee: LG ELECTRONICS INC.Inventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim
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Patent number: 11004991Abstract: Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.Type: GrantFiled: February 23, 2018Date of Patent: May 11, 2021Assignee: LG ELECTRONICS INC.Inventors: Younggu Do, Sungjin Kim, Hyungwook Choi
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Publication number: 20190326456Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.Type: ApplicationFiled: June 28, 2019Publication date: October 24, 2019Applicant: LG ELECTRONICS INC.Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
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Publication number: 20190319140Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.Type: ApplicationFiled: June 28, 2019Publication date: October 17, 2019Applicant: LG ELECTRONICS INC.Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
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Publication number: 20190148573Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.Type: ApplicationFiled: January 17, 2019Publication date: May 16, 2019Applicant: LG ELECTRONICS INC.Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
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Patent number: 10230009Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.Type: GrantFiled: June 1, 2018Date of Patent: March 12, 2019Assignee: LG ELECTRONICS INC.Inventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim
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Publication number: 20180277694Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.Type: ApplicationFiled: June 1, 2018Publication date: September 27, 2018Applicant: LG ELECTRONICS INC.Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
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Publication number: 20180248060Abstract: Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.Type: ApplicationFiled: February 23, 2018Publication date: August 30, 2018Applicant: LG ELECTRONICS INC.Inventors: Younggu DO, Sungjin KIM, Hyungwook CHOI
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Patent number: 10033202Abstract: An apparatus for charging a battery of an electronic device is provided. The apparatus includes a battery configured to supply power to the electronic device; a charger configured to charge the battery according to a set charging voltage (V_SET) and a charging current (I_SET); and a controller configured to set the V_SET and the I_SET, and receive an output value of the charger or the battery during charging to re-set the V_SET if the output value corresponds to a pre-set reference range.Type: GrantFiled: February 8, 2016Date of Patent: July 24, 2018Assignee: Samsung Electronics Co., LtdInventors: Insung Hwang, Jinsoo Ha, Yongbum Ha, Sunghoon Kim, Jaedeok Cha, Hyungwook Choi
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Patent number: 10014419Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.Type: GrantFiled: July 6, 2017Date of Patent: July 3, 2018Assignee: LG ELECTRONICS INC.Inventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim
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Publication number: 20170309761Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.Type: ApplicationFiled: July 6, 2017Publication date: October 26, 2017Applicant: LG ELECTRONICS INC.Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
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Patent number: 9722104Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.Type: GrantFiled: November 27, 2015Date of Patent: August 1, 2017Assignee: LG ELECTRONICS INC.Inventors: Jungmin Ha, Sungjin Kim, Juhwa Cheong, Junyong Ahn, Hyungwook Choi, Wonjae Chang, Jaesung Kim