Abstract: A wafer test trigger signal generating circuit of a semiconductor memory apparatus includes an enable timing control unit configured to generate an enable signal by using a plurality of address signals, and a trigger signal generating unit configured to generate a test trigger signal, which designates a decoding timing of a test mode defined by the plurality of address signals, in response to the enable signal.

Abstract: An auto-refresh control circuit includes a control signal generating section configured to simultaneously or individually enable first and second control signals in response to an information combination signal having refresh information and operation mode information and first and second chip selection signals, and an auto-refresh signal generating section configured to generate first and second auto-refresh signals in response to a plurality of command signals and the first and second control signals.

Abstract: A circuit for controlling a pulse width of a refresh signal is provided. The circuit includes a first pulse width controller for receiving a first refresh signal having a first enable period, and generating a second refresh signal having a second refresh signal, and a second pulse width controller for receiving the second refresh signal, and generating a third refresh signal having a third enable period.

Abstract: A semiconductor memory apparatus includes first and second bank blocks, a mode generator configured to generate a chip select mode signal used to control an operational mode of the first and second bank blocks, and a controller configured to drive the first and second bank blocks in response to the chip select mode signal, first and second select signals, and a predetermined address signal that are used to control driving of the first and second bank blocks, wherein the controller receives the chip select mode signal having a level used to determine a single chip mode to control operation of the first and second bank blocks in one rank unit, and the first and second bank blocks are selectively activated by using the predetermined address signal.

Abstract: A method of testing a word line using a word line driving circuit comprising; activating a word line by activating a word line driving signal; floating the word line by activating a test mode signal after the activating of the word line; recording data having a predetermined logic value into a memory cell by inputting a write command while the word line is floated; and reading out data from the memory cell by inputting a read command after the recording of data.

Abstract: A wafer test trigger signal generating circuit of a semiconductor memory apparatus includes an enable timing control unit configured to generate an enable signal by using a plurality of address signals, and a trigger signal generating unit configured to generate a test trigger signal, which designates a decoding timing of a test mode defined by the plurality of address signals, in response to the enable signal.

Abstract: A semiconductor memory apparatus includes first and second bank blocks, a mode generator configured to generate a chip select mode signal used to control an operational mode of the first and second bank blocks, and a controller configured to drive the first and second bank blocks in response to the chip select mode signal, first and second select signals, and a predetermined address signal that are used to control driving of the first and second bank blocks, wherein the controller receives the chip select mode signal having a level used to determine a single chip mode to control operation of the first and second bank blocks in one rank unit, and the first and second bank blocks are selectively activated by using the predetermined address signal.

Abstract: A semiconductor device may include a first logic unit for performing a logic operation with respect to a plurality of first control signals, each of which indicates whether a corresponding one of a plurality of banks of the semiconductor device is in an active state, a refresh detector for outputting a second control signal which is enabled when at least one of the banks performs a self-refresh operation or auto-refresh operation, and a second logic unit for performing a logic operation with respect to an output signal from the first logic unit and the second control signal to generate a third control signal having information about activation of the semiconductor device. The third control signal is enabled when at least one of the banks performs the self-refresh operation or auto-refresh operation even though it is in the active state.

Abstract: An auto-refresh control circuit includes a control signal generating section configured to simultaneously or individually enable first and second control signals in response to an information combination signal having refresh information and operation mode information and first and second chip selection signals, and an auto-refresh signal generating section configured to generate first and second auto-refresh signals in response to a plurality of command signals and the first and second control signals.

Abstract: A circuit for controlling a pulse width of a refresh signal is provided. The circuit includes a first pulse width controller for receiving a first refresh signal having a first enable period, and generating a second refresh signal having a second refresh signal, and a second pulse width controller for receiving the second refresh signal, and generating a third refresh signal having a third enable period.

Abstract: A fuse information control device having a delay circuit to delay an active signal, includes a fuse circuit that outputs fuse information in response to a fuse information control signal, and a fuse information control signal generating unit that generates the fuse information control signal in response to one of the active signal and internal delay signals of the delay circuit.

Abstract: A semiconductor device may include a first logic unit for performing a logic operation with respect to a plurality of first control signals, each of which indicates whether a corresponding one of a plurality of banks of the semiconductor device is in an active state, a refresh detector for outputting a second control signal which is enabled when at least one of the banks performs a self-refresh operation or auto-refresh operation, and a second logic unit for performing a logic operation with respect to an output signal from the first logic unit and the second control signal to generate a third control signal having information about activation of the semiconductor device. The third control signal is enabled when at least one of the banks performs the self-refresh operation or auto-refresh operation even though it is in the active state.

Abstract: A circuit for controlling a pulse width of a refresh signal is provided. The circuit includes a first pulse width controller for receiving a first refresh signal having a first enable period, and generating a second refresh signal having a second refresh signal, and a second pulse width controller for receiving the second refresh signal, and generating a third refresh signal having a third enable period.

Abstract: A semiconductor device may include a first logic unit for performing a logic operation with respect to a plurality of first control signals, each of which indicates whether a corresponding one of a plurality of banks of the semiconductor device is in an active state, a refresh detector for outputting a second control signal which is enabled when at least one of the banks performs a self-refresh operation or auto-refresh operation, and a second logic unit for performing a logic operation with respect to an output signal from the first logic unit and the second control signal to generate a third control signal having information about activation of the semiconductor device. The third control signal is enabled when at least one of the banks performs the self-refresh operation or auto-refresh operation even though it is in the active state.

Abstract: A method of testing a word line using a word line driving circuit comprising: activating a word line by activating a word line driving signal; floating the word line by activating a test mode signal after the activating of the word line; recording data having a predetermined logic value into a memory cell by inputting a write command while the word line is floated; and reading out data from the memory cell by inputting a read command after the recording of data.

Abstract: A circuit for controlling a pulse width of a refresh signal is provided. The circuit includes a first pulse width controller for receiving a first refresh signal having a first enable period, and generating a second refresh signal having a second refresh signal, and a second pulse width controller for receiving the second refresh signal, and generating a third refresh signal having a third enable period.