Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.

Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

Abstract: The present invention relates to washing machines, and, more particularly, to a washing machine in which a drum that holds laundry is rotated with respect to a substantially horizontal rotation shaft. The washing machine includes a shoe course selection unit for enabling a user to select a shoe course, and a controller for controlling operation of the washing machine to wash shoes while swinging the drum within 90° in left/right directions if the user selects the shoe course.

Abstract: In a method of fabricating a semiconductor device, a target layer and a first material layer are sequentially formed on a substrate. A plurality of second material layer patterns are formed on the first material layer, the second material layer patterns extending in a first horizontal direction. A plurality of hardmask patterns extending in a second horizontal direction are formed on the plurality of second material layer patterns and the first material layer, wherein the second horizontal direction is different from the first horizontal direction. A first material layer pattern is formed by etching the first material layer using the plurality of hardmask patterns and the plurality of second material layer patterns as etch masks. A target layer pattern with a plurality of holes is formed by etching the target layer using the first material layer pattern as an etch mask.

Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

Abstract: Disclosed is a drum type washing machine having a touch up function and a method for touching up thereof. The drum type washing machine having the touch up function is provided with a touch up button for removing wrinkles on laundry left in the drum type washing machine and a method for touching up. Accordingly, it is not required for a user to additionally execute rinsing and dehydrating processes, or ironing so as to remove wrinkles on the laundry, thus it is convenient. And, since it is not required to additionally execute the rinsing and dehydrating processes, it is capable of preventing unwanted consumption of water and electricity.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.

Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.

Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

Abstract: A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum.