Abstract: In case of forming electrodes for electronic device using a two-dimensional semiconductor, a two-dimensional semiconductor layer doped into n-type or p-type is formed on a substrate, a first area and a second area of the doped two-dimensional semiconductor layer is patterned into a predetermined pattern shape, and a first electrode and a second electrode are formed on the patterned first and second areas, respectively.

Abstract: The present disclosure relates to a method of doping a 2-dimensional semiconductor. The method of doping a 2-dimensional semiconductor includes: forming an insulating layer including photosensitive particles on a substrate; moving the photosensitive particles included in the insulating layer to a surface of the insulating layer through a heat treatment; forming a 2-dimensional semiconductor layer on the insulating layer; and doping a 2-dimensional semiconductor material included in the 2-dimensional semiconductor layer by exposing the 2-dimensional semiconductor material to a light corresponding to an absorption wavelength of the photosensitive particles included in the insulating layer.

Abstract: In case of forming electrodes for electronic device using a two-dimensional semiconductor, a two-dimensional semiconductor layer doped into n-type or p-type is formed on a substrate, a first area and a second area of the doped two-dimensional semiconductor layer is patterned into a predetermined pattern shape, and a first electrode and a second electrode are formed on the patterned first and second areas, respectively.

Abstract: The present disclosure relates to a method of doping a 2-dimensional semiconductor. The method of doping a 2-dimensional semiconductor includes: forming an insulating layer including photosensitive particles on a substrate; moving the photosensitive particles included in the insulating layer to a surface of the insulating layer through a heat treatment; forming a 2-dimensional semiconductor layer on the insulating layer; and doping a 2-dimensional semiconductor material included in the 2-dimensional semiconductor layer by exposing the 2-dimensional semiconductor material to a light corresponding to an absorption wavelength of the photosensitive particles included in the insulating layer.

Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.

Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.

Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.

Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.