Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, particularly, a gas supply device, for example, a shower head, by using a vortex tube. The cooling device may supply a cooling gas of a temperature lower than the temperature of the gas supply device heated to a high temperature, thereby easily controlling the temperature of the gas supply device.

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

Abstract: A substrate processing apparatus includes one or more reactors, which physically prevent a process gas in a reaction space from penetrating into a space other than the reaction space. Furthermore, provided is a substrate processing apparatus capable of minimizing the occurrence of parasitic plasma in a space other than a reaction space.

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, particularly, a gas supply device, for example, a shower head, by using a vortex tube. The cooling device may supply a cooling gas of a temperature lower than the temperature of the gas supply device heated to a high temperature, thereby easily controlling the temperature of the gas supply device.

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

Abstract: Disclosed is a substrate treating apparatus which includes a chamber, a support unit, a dielectric plate, a gas supplying unit, an antenna, and a heating unit. The chamber has a processing space therein, and an upper surface of the processing space is opened. The support unit is disposed in the chamber and supports a substrate. The dielectric plate is installed on the opened upper surface of the chamber to cover the opened upper surface. The gas supplying unit supplies a gas in the chamber. The antenna is disposed above the dielectric plate and creates plasma from the gas. The heating unit is disposed above the antenna and heats the dielectric plate.

Abstract: Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

Abstract: Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

Abstract: Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

Abstract: Disclosed is a substrate treating apparatus which includes a chamber, a support unit, a dielectric plate, a gas supplying unit, an antenna, and a heating unit. The chamber has a processing space therein, and an upper surface of the processing space is opened. The support unit is disposed in the chamber and supports a substrate. The dielectric plate is installed on the opened upper surface of the chamber to cover the opened upper surface. The gas supplying unit supplies a gas in the chamber. The antenna is disposed above the dielectric plate and creates plasma from the gas. The heating unit is disposed above the antenna and heats the dielectric plate.