Patents by Inventor Hyung Jong JEONG

Hyung Jong JEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for fabricating the same
    Patent number: 11641749
    Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: May 2, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Jun Seong, Jun Hwan Paik, Hyung Jong Jeong
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20210273016
    Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
    Type: Application
    Filed: May 19, 2021
    Publication date: September 2, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong Jun SEONG, Jun Hwan PAIK, Hyung Jong JEONG
  • Semiconductor device and method for fabricating the same
    Patent number: 11037985
    Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: June 15, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Jun Seong, Jun Hwan Paik, Hyung Jong Jeong
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200075852
    Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
    Type: Application
    Filed: April 9, 2019
    Publication date: March 5, 2020
    Inventors: Dong Jun SEONG, Jun Hwan PAIK, Hyung Jong JEONG