Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)n2??Formula 1 wherein M1 is a transition metal, Ln1 is a ligand represented by Formula 1-1, Ln2 is a bidentate ligand, n1 is 1, 2, or 3, and n2 is 0, 1, or 2, wherein X1, X2, X11 to X14, Y1, R10, R20, ring CY2, b10, and b20 are as defined herein, and wherein * and *? each indicate a binding site to M1.

Abstract: According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.

Abstract: A new class of mass-tag polymers is provided, which include enriched metal isotopes such as zirconium and hafnium mass tags. The chemistry of these new mass tags are different from that of lanthanide mass tags, and opens up new mass channels that can be used in mass cytometry. These polymers may be used for mass cytometry, therapeutic delivery of a radioactive isotope, or screening of a therapeutic isotope. Aspects include a kit, method of making, and method of using a polymer, isotopic composition, or both. A kit may include a polymer. The polymer may include pendant groups that chelate an enriched isotope, such as zirconium and/or hafnium. The kit may include an isotopic composition comprising an enriched zirconium or hafnium isotope. Polymers may be conjugated to a biologically active material. Aspects may also include making a kit. Aspects include use of a kit, such as for mass cytometry.

Abstract: The present invention provides a method of fabricating a carbon thin-film having high conductivity and high hardness, comprising the steps of: supplying argon (Ar) to the chamber as sputtering gas; maintaining the initial vacuum of the chamber at about 10?6 Torr; forming deposition pressure of about 10?3 Torr so as to activate plasma; and applying negative DC bias to the substrate, and a method of fabricating a thin-film electroluminescent device comprising the steps of: providing a transparent TCO or ITO substrate; forming a phosphor layer on the top of the transparent substrate; forming an insulation layer on the top of the phosphor layer through vacuum deposition; and forming a carbon thin-film electrode through closed-field unbalanced magnetron sputtering.