Abstract: Described herein are nanoparticles comprising NaLnF4, wherein Ln includes all non-radioactive lanthanide elements, or NaYF4, and methods of making and using the same. The nanoparticles may optionally be modified with PEG or zwitterionic polymers containing a bisphosphonate end group, wherein the bisphosphonate end group optionally comprises an aminohexyl group. As described herein. NaLnF4 or NaYF4 nanoparticles may be used as high-sensitivity reagents for mass cytometry.

Abstract: A selector includes a base material including carbon; and a dopant implanted into the base material. A method for fabricating a selector includes forming a carbon layer and implanting a dopant into the carbon layer. A semiconductor device includes a selector pattern including carbon as a base material and a dopant implanted through an ion implantation process; and a memory pattern disposed in an upper portion or a lower portion of the selector pattern.

Abstract: According to one embodiment, a storage device includes a stacked layer structure including a switching element, an electrode including a first electrode portion, and a variable resistance element, which are stacked in a first direction, wherein the switching element and the electrode are in contact with each other in the first direction, and a first face of the first electrode portion on a side of the switching element is in contact with a second face that is inside the stacked layer structure and that is larger than the first face.

Abstract: According to one embodiment, a magnetic memory device includes a lower structure, a bottom electrode provided on the lower structure and formed of a conductive material, a top electrode provided above the bottom electrode, a magnetoresistance effect element provided between the bottom electrode and the top electrode, and an oxide insulating layer including a first portion provided on a side surface of the bottom electrode and a second portion provided on a side surface of the magnetoresistance effect element, and formed of an oxide of the conductive material.

Abstract: According to one embodiment, a memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line, and including a magnetoresistance effect element, a switching element, a middle electrode provided between the magnetoresistance effect element and the switching element, and a resistive layer provided between the magnetoresistance effect element and the second wiring line. A resistance of the resistive layer is higher than a resistance of the middle electrode.

Abstract: According to one embodiment, a magnetic memory device includes a switching element; a magnetoresistive effect element; and an electrode provided between the switching element and the magnetoresistive effect element, wherein the electrode includes a first sub-electrode in contact with the switching element, a second sub-electrode in contact with the magnetoresistive effect element, and a third sub-electrode provided between the first sub-electrode and the second sub-electrode, wherein the first sub-electrode and the second sub-electrode includes at least one of C and CN, and wherein the third sub-electrode includes at least one of a high melting point metal element and a compound of the high melting point metal element.

Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

Abstract: According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.

Abstract: A new class of mass-tag polymers is provided, which include enriched metal isotopes such as zirconium and hafnium mass tags. The chemistry of these new mass tags are different from that of lanthanide mass tags, and opens up new mass channels that can be used in mass cytometry. These polymers may be used for mass cytometry, therapeutic delivery of a radioactive isotope, or screening of a therapeutic isotope. Aspects include a kit, method of making, and method of using a polymer, isotopic composition, or both. A kit may include a polymer. The polymer may include pendant groups that chelate an enriched isotope, such as zirconium and/or hafnium. The kit may include an isotopic composition comprising an enriched zirconium or hafnium isotope. Polymers may be conjugated to a biologically active material. Aspects may also include making a kit. Aspects include use of a kit, such as for mass cytometry.

Abstract: The present invention provides a method of fabricating a carbon thin-film having high conductivity and high hardness, comprising the steps of: supplying argon (Ar) to the chamber as sputtering gas; maintaining the initial vacuum of the chamber at about 10?6 Torr; forming deposition pressure of about 10?3 Torr so as to activate plasma; and applying negative DC bias to the substrate, and a method of fabricating a thin-film electroluminescent device comprising the steps of: providing a transparent TCO or ITO substrate; forming a phosphor layer on the top of the transparent substrate; forming an insulation layer on the top of the phosphor layer through vacuum deposition; and forming a carbon thin-film electrode through closed-field unbalanced magnetron sputtering.