Abstract: A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.

Abstract: A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.

Abstract: An improved gallium arsenide anneal boat and method for annealing comprises a slot structure for holding a wafer-stack of first and second GaAs wafers and a silicon wafer in the slot structure prior to annealing. The silicon wafer is tightly held in a central slot to maintain a vertical position and the GaAs wafers are loosely held in outside slots to avoid the formation of slip lines. The GaAs wafers slightly adhere to the silicon wafer to maintain a vertical position to avoid bending. Additionally, the wafer-stacks are separated by more than about 1.25 inches and processed in arsine gas at about 1 atm. pressure to avoid hazing.