Abstract: A focus ring includes an inner ring on a periphery of an electrostatic chuck, and an outer ring having an inner circumferential surface surrounding an outer circumferential surface of the inner ring, wherein a lower gap between a lower end of the outer circumferential surface of the inner ring and a lower end of the inner circumferential surface of the outer ring is narrower than an upper gap between an upper end of the outer circumferential surface of the inner ring and an upper end of the inner circumferential surface of the outer ring, and wherein the outer ring includes a thickness-compensating portion on the inner circumferential surface of the outer ring, the thickness-compensating portion being positioned higher than an imaginary straight line between the upper end and the lower end of the inner circumferential surface of the outer ring.

Abstract: The present disclosure relates to showerheads, substrate processing apparatuses, and semiconductor fabrication methods. One example showerhead comprises an inner plate, and an outer plate combined with the inner plate and surrounding the inner plate. The inner plate includes a disk-shaped central member that comprises a gas hole extending in a first direction, and a ring-shaped first coupling member outside the central member and surrounding the central member. The outer plate includes an outer ring body and a ring-shaped second coupling member inside the outer ring body. A bottom surface of the first coupling member is in contact with a top surface of the second coupling member. A first angle between the first direction and an outer surface of the first coupling member is different from a second angle between the first direction and an inner surface of the outer ring body.

Abstract: Provided is a substrate processing apparatus, including a process chamber, a plasma shutter configured ascend to close the process chamber, and an upper liner on the process chamber, wherein the process chamber includes a process space in which a substrate process is performed, and an insertion passage adjacent to the process space and connecting the process space to an outside of the process chamber, wherein the upper liner includes an extension liner, wherein the extension liner faces a connection inner surface that upwardly extends from an inner end of a passage ceiling forming the insertion passage, and wherein, in a state where the plasma shutter ascends to close the process space, an upper end of the plasma shutter is inserted between the connection inner surface and the extension liner.

Abstract: A showerhead includes an inner plate including at least one gas hole that penetrates the inner plate in a first direction, and an outer plate at least partially surrounding the inner plate, the outer plate having a ring shape with an axis that extends in the first direction, where the outer plate includes a first inner surface that extends downward and forms an acute angle with a line corresponding to the first direction, a first bottom surface that extends outward from the first inner surface, and a first outer surface that extends upward from the first bottom surface, and where a first angle between the first inner surface and a line corresponding to the first direction is greater than a second angle between the first outer surface of the outer plate and a line corresponding to the first direction.

Abstract: A substrate processing method includes classifying a kind of substrate treatment process in which a focus ring is used, classifying a plurality of focus rings, selecting from the classified plurality of focus rings a specific focus ring suitable for a certain substrate treatment process corresponding to the classified kind of substrate treatment process, and performing the certain substrate treatment process using the selected specific focus ring. The operation of classifying the plurality of focus rings includes classifying the plurality of focus rings into two or more grades.

Abstract: Provided is a substrate processing apparatus, including a process chamber, a plasma shutter configured ascend to close the process chamber, and an upper liner on the process chamber, wherein the process chamber includes a process space in which a substrate process is performed, and an insertion passage adjacent to the process space and connecting the process space to an outside of the process chamber, wherein the upper liner includes an extension liner, wherein the extension liner faces a connection inner surface that upwardly extends from an inner end of a passage ceiling forming the insertion passage, and wherein, in a state where the plasma shutter ascends to close the process space, an upper end of the plasma shutter is inserted between the connection inner surface and the extension liner.

Abstract: A substrate processing apparatus includes a focus ring, the focus ring includes a central axis that extends in a first direction, a top surface having a first inner diameter, a bottom surface having a second inner diameter that is smaller than the first inner diameter, and an inner lateral surface between the top surface and the bottom surface, the inner lateral surface including a first inner lateral surface and a second inner lateral surface, where the second inner lateral surface extends downward from the first inner lateral surface and a first angle between the first inner lateral surface and a line corresponding to the first direction is different from a second angle between the second inner lateral surface and the line corresponding to the first direction.