Patents by Inventor Hyung-Suk A. Yoon

Hyung-Suk A. Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing refractory metal layers employing sequential deposition techniques
    Publication number: 20040247788
    Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
    Type: Application
    Filed: June 29, 2004
    Publication date: December 9, 2004
    Inventors: Hongbin Fang, Hyung-Suk A. Yoon, Ken Kaung Lai, Chi Chung (Yang) Young, James Horng, Ming Xi, Michael X. Yang, Hua Chung
  • Method for depositing refractory metal layers employing sequential deposition techniques
    Patent number: 6797340
    Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: September 28, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Hongbin Fang, Hyung-Suk A. Yoon, Ken Kaung Lai, Chi Chung Young, James Horng, Ming XI, Michael X. Yang, Hua Chung
  • Method for depositing refractory metal layers employing sequential deposition techniques
    Publication number: 20030104126
    Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
    Type: Application
    Filed: October 10, 2002
    Publication date: June 5, 2003
    Inventors: Hongbin Fang, Hyung-Suk A. Yoon, Ken Kaung Lai, C.C. Young, James Horng, Ming Xi, Michael X. Yang, Hua Chung