Abstract: A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming and patterning a first metal layer, which is not anodizable, to a first predetermined thickness on the substrate; forming and patterning a second metal layer, which is anodized on the substrate forming a mask corresponding to said first metal layer on said second metal layer, and forming a flat surface by anodic oxidation in order that regions other than the first and second metal layers become an insulator having the same vertical elevation as the surface of the substrate. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.

Abstract: A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate; forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on the first metal layer; depositing a third metal layer, that may be anodizable, to a third predetermined thickness; and forming a flat surface on the third layer by anodic oxidation. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.