Patents by Inventor Hyungtak Seo

Hyungtak Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of controlling electric conductivity of metal oxide thin film and thin film transistor including the metal oxide film having the controlled electric conductivity
    Patent number: 10217871
    Abstract: A method for controlling an electric conductivity of a metal oxide thin film is disclosed. The method may include forming a metal oxide thin film; applying thermal treatment to the metal oxide thin film; and irradiating UV (ultraviolet)-rays to the metal oxide thin film in an atmosphere containing water molecules and oxygen molecules. Thus, the hydrogen may be doped into the metal oxide thin film to improve the electric conductivity of the metal oxide thin film.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: February 26, 2019
    Assignee: Industry-Academic Cooperation Foundation of Ajou University
    Inventors: Hyungtak Seo, Jin Seo Kim, Sang Yeon Lee
  • SENSOR DEVICE FOR SENSING FLUORINE-BASED GAS AND METHOD FOR MANUFACTURING THE DEVICE
    Publication number: 20170234846
    Abstract: In one aspect of the present disclosure, there is provided a sensor device for sensing a fluorine-based gas, the device comprising: a substrate; and a sensing layer on the substrate, wherein the sensing layer includes hydrogenated titanium dioxide nano-particles, wherein when the sensing layer reacts with the fluorine-based gas, the sending layer has a color change.
    Type: Application
    Filed: September 26, 2016
    Publication date: August 17, 2017
    Applicant: Industry-Academic Cooperation Foundation of Ajou University
    Inventors: Hyungtak SEO, Go Woon SHIM, Sang Yeon LEE
  • METHOD OF CONTROLLING ELECTRIC CONDUCTIVITY OF METAL OXIDE THIN FILM AND THIN FILM TRANSISTOR INCLUDING THE METAL OXIDE FILM HAVING THE CONTROLLED ELECTRIC CONDUCTIVITY
    Publication number: 20170092772
    Abstract: A method for controlling an electric conductivity of a metal oxide thin film is disclosed. The method may include forming a metal oxide thin film; applying thermal treatment to the metal oxide thin film; and irradiating UV (ultraviolet)-rays to the metal oxide thin film in an atmosphere containing water molecules and oxygen molecules. Thus, the hydrogen may be doped into the metal oxide thin film to improve the electric conductivity of the metal oxide thin film.
    Type: Application
    Filed: September 26, 2016
    Publication date: March 30, 2017
    Applicant: Industry-Academic Cooperation Foundation of Ajou University
    Inventors: Hyungtak SEO, Jin Seo KIM, Sang Yeon LEE
  • Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion
    Patent number: 9312342
    Abstract: A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO2 composition.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: April 12, 2016
    Assignee: The Regents of the University of California
    Inventors: L. Robert Baker, Hyungtak Seo, Antoine Hervier, Gabor A. Somorjai
  • GENERATION OF HIGHLY N-TYPE, DEFECT PASSIVATED TRANSITION METAL OXIDES USING PLASMA FLUORINE INSERTION
    Publication number: 20140306215
    Abstract: A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3% oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO2 composition.
    Type: Application
    Filed: December 16, 2011
    Publication date: October 16, 2014
    Applicant: The Regents of the Unviersity of California
    Inventors: L. Robert Baker, Hyungtak Seo, Antoine Hervier, Gabor A. Somorjai