Abstract: The present invention relates to a multi-modality system for recommending multiple items using an interaction and a method of operating the same. The multi-modality system includes an interaction data preprocessing module that preprocesses an interaction data set and converts the preprocessed interaction data set into interaction training data; an item data preprocessing module that preprocesses item information data and converts the preprocessed item information data into item training data; and a learning module that includes a neural network model that is trained using the interaction training data and the item training data and outputs a result including a set of recommended items using a conversation context with a user as input.

Abstract: A cylindrical secondary battery allowing the loss of space inside a case to be reduced is provided. As an example, a cylindrical secondary battery includes an electrode assembly including a first electrode plate, a separator, and a second electrode plate, a case, a terminal passing through an upper surface portion of the case and coupled to the case through a first gasket, a first current collector plate arranged between an upper surface of the electrode assembly and the case and electrically connecting the first electrode plate and the terminal, and a cap plate configured to seal a lower end portion of the case, the case including the upper surface portion having a flat plate shape, a central portion having a terminal hole and protruding outward further than the upper surface portion, and a side surface portion extending downward from an edge of the upper surface portion.

Abstract: Provided is a display device comprising a substrate, a first data line and a second data line disposed on the substrate and extended in a first direction, an anode electrode disposed on the first data line and the second data line, a pixel-defining film disposed over the anode electrode and defining an emission area, an organic light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the organic light-emitting layer, wherein each of the first data line and the second data line has a curved shape when viewed from a top where the first anode electrode and the second anode electrode overlap the anode electrode.

Abstract: An embodiment of the present invention relates to a cylindrical secondary battery in which a positive electrode terminal is adhered and fixed to a cylindrical can by an insulating sheet, and thus sealing between the cylindrical can and the positive electrode terminal can be facilitated due to an increased contact area.

Abstract: A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 ? to 1400 ?, the first inorganic insulating layer has a thickness of 400 ? to 3500 ?, the second inorganic insulating layer has a thickness of 200 ? to 2400 ?, and the third inorganic insulating layer has a thickness of 4000 ? or more.

Abstract: A display device includes a housing, a display panel inserted into or withdrawn from the housing. The display panel includes a first display area and a second display area adjacent to the first display area with a boundary line therebetween, a battery which provides a power to the display panel, and a processor which drives the first display area in a display mode, in which the display panel displays an image in a state in which the first display area is withdrawn from the housing and the second display area is inserted into the housing. The processor drives the second display area in a charging mode, in which the battery is charged, in a way such that an average of degradation degrees of second pixels included in the second display area is equal to an average of degradation degrees of first pixels included in the first display area.

Abstract: A display device includes a display panel and a repair panel overlapping a region of the display panel. The display panel includes: a substrate; a plurality of transistors on the substrate; and a first electrode connected to the transistors. The repair panel includes: a repair substrate; a plurality of connection electrodes extending through the repair substrate and on opposite surfaces of the repair substrate; a first repair electrode connected to the connection electrodes; a first repair emission layer on the first repair electrode; and a repair common electrode on the first repair emission layer. In a region where the display panel and the repair panel overlap each other, the first electrode and the first repair electrode are electrically connected to each other through the connection electrode.

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

Abstract: A display device includes a substrate; a color filter layer positioned on the substrate correspondingly to a path where an image is outputted; and an organic overcoat layer covering the color filter layer and including an ion implantation layer coated on the surface.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion implantation assembly to implant ions into a partial region of the substrate. This allows for a compact ion implantation system to implant ions into a very large substrate. The substrate moves through the ion implantation system in a first direction, turns around, and then moves back through the ion implantation system in a second and opposite direction, where ions are implanted into the substrate while the substrate is moving in both directions. The path in the first direction can be spaced-apart from the path in the second direction to allow for two substrates to be processed simultaneously.

Abstract: A display device includes a substrate; a color filter layer positioned on the substrate correspondingly to a path where an image is outputted; and an organic overcoat layer covering the color filter layer and including an ion implantation layer coated on the surface.

Abstract: According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion implantation assembly to implant ions into a partial region of the substrate. This allows for a compact ion implantation system to implant ions into a very large substrate. The substrate moves through the ion implantation system in a first direction, turns around, and then moves back through the ion implantation system in a second and opposite direction, where ions are implanted into the substrate while the substrate is moving to in both directions. The path in the first direction can be spaced-apart from the path in the second direction to allow for two substrates to be processed simultaneously.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.

Abstract: An apparatus and method for inspecting polycrystalline silicon (Poly-Si) that illuminates light onto protrusions in the Poly-Si in order to determine a distance between them using intensity and reflection angle of reflected light. The Poly-Si inspection apparatus includes a light source that illuminates light, and a reflected light detector for receiving reflected light, wherein a distance between protrusions is measured by an incident angle of the light illuminated into the protrusion from the light source, a detection angle of the reflected light detector, and a wavelength of the detected reflected light.

Abstract: A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.

Abstract: An apparatus and method for inspecting polycrystalline silicon (Poly-Si) that illuminates light onto protrusions in the Poly-Si in order to determine a distance between them using intensity and reflection angle of reflected light. The Poly-Si inspection apparatus includes a light source that illuminates light, and a reflected light detector for receiving reflected light, wherein a distance between protrusions is measured by an incident angle of the light illuminated into the protrusion from the light source, a detection angle of the reflected light detector, and a wavelength of the detected reflected light.