Patents by Inventor Hyungyu JANG

Hyungyu JANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160380119
    Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.
    Type: Application
    Filed: March 30, 2016
    Publication date: December 29, 2016
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Dong Yun JUNG, Hyun Soo LEE, Sang Choon KO, Jeong-Jin KIM, Zin-Sig KIM, Jeho NA, Eun Soo NAM, Jae Kyoung MUN, Young Rak PARK, Sung-Bum BAE, Hyung Seok LEE, Woojin CHANG, Hyungyu JANG, Chi Hoon JUN
  • Patent number: 9159583
    Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: October 13, 2015
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Choon Ko, Jae Kyoung Mun, Woojin Chang, Sung-Bum Bae, Young Rak Park, Chi Hoon Jun, Seok-Hwan Moon, Woo-Young Jang, Jeong-Jin Kim, Hyungyu Jang, Je Ho Na, Eun Soo Nam
  • Publication number: 20150187599
    Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
    Type: Application
    Filed: June 20, 2014
    Publication date: July 2, 2015
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sang Choon KO, Jae Kyoung MUN, Woojin CHANG, Sung-Bum BAE, Young Rak PARK, Chi Hoon JUN, Seok-Hwan MOON, Woo-Young JANG, Jeong-Jin KIM, Hyungyu JANG, Je Ho NA, Eun Soo NAM