Patents by Inventor Hyungyu Jin

Hyungyu Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250017116
    Abstract: According to an embodiment of the inventive concept, a magnetic memory device includes a substrate on which a transistor controlled by a word line is disposed, a spin detection layer disposed on the substrate, and a magnon spin valve disposed on the spin detection layer. Here, the magnon spin valve includes a free layer disposed on the spin detection layer, a reference layer disposed on the free layer, and a spacer disposed between the free layer and the reference layer. Also, one edge of the spin detection layer is connected to a source/drain region of the transistor, the other edge of the spin detection layer is connected to a source line, and the magnon spin valve is disposed on a portion between the one edge and the other edge of the spin detection layer. The spin detection layer includes a topological material or a weyl semimetal. Each of the reference layer and the free layer includes a ferromagnetic insulator.
    Type: Application
    Filed: June 21, 2024
    Publication date: January 9, 2025
    Applicants: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, The Industry & Academic Cooperation in Chungnam National University
    Inventors: Hyungyu JIN, Jong Ryul JEONG, Kab-Jin KIM, Sangjun PARK, JunSeok KIM, Cao Van PHUOC
  • Patent number: 10995005
    Abstract: A two-step thermochemical gas reduction process based on poly-cation oxides includes repeatedly cycling a thermal reduction step and a gas reduction step. In the thermal reduction the poly-cation oxide is heated to produce a reduced poly-cation oxide and oxygen. In the gas reduction step, the reduced poly-cation oxide is reacted with a gas to reduce the gas, while reoxidizing the poly-cation oxide. The poly-cation oxide has at least two distinct crystal structures at two distinct temperatures and is capable of undergoing a reversible phase transformation between the two distinct crystal structures. For example, the poly-cation oxide may be an entropy tuned mixed metal oxide, such as an entropy stabilized mixed metal oxide, where the entropy-tuning is achieved via change in crystal structure of one of more of the compounds involved. The gas reduction process may be used for water splitting, CO2 splitting, NOx reduction, and other gas reduction processes.
    Type: Grant
    Filed: October 28, 2017
    Date of Patent: May 4, 2021
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Nadia L. Ahlborg, William C. Chueh, Hyungyu Jin, Arunava Majumdar, Shang Zhai, Jimmy A. Rojas Herrera
  • Publication number: 20180118576
    Abstract: A two-step thermochemical gas reduction process based on poly-cation oxides includes repeatedly cycling a thermal reduction step and a gas reduction step. In the thermal reduction the poly-cation oxide is heated to produce a reduced poly-cation oxide and oxygen. In the gas reduction step, the reduced poly-cation oxide is reacted with a gas to reduce the gas, while reoxidizing the poly-cation oxide. The poly-cation oxide has at least two distinct crystal structures at two distinct temperatures and is capable of undergoing a reversible phase transformation between the two distinct crystal structures. For example, the poly-cation oxide may be an entropy tuned mixed metal oxide, such as an entropy stabilized mixed metal oxide, where the entropy-tuning is achieved via change in crystal structure of one of more of the compounds involved. The gas reduction process may be used for water splitting, CO2 splitting, NOx reduction, and other gas reduction processes.
    Type: Application
    Filed: October 28, 2017
    Publication date: May 3, 2018
    Inventors: Nadia L. Ahlborg, William C. Chueh, Hyungyu Jin, Arunava Majumdar, Shang Zhai, Jimmy A. Rojas Herrera